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    Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN–AlN buffer layer

    Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN–AlN buffer layer by G.P. Dimitrakopulos, T. Kehagias, A. Ajagunna, J. Kioseoglou, Danis Kerasiotis, G. Nouet, A.P. Vajpeyi, T. Karakostas

    Published 2010
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