Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques by Shu Yang, Zhikai Tang, King-Yuen Wong, Yu-Syuan Lin, Yunyou Lu, Sen Huang, Chen, Kevin J.

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Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMO... by Franco, J., Kaczer, B., Roussel, Ph J., Mitard, J., Sioncke, S., Witters, L., Mertens, H., Grasser, T., Groeseneken, G.

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Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory by Navarro, G., Coue, M., Kiouseloglou, A., Noe, P., Fillot, F., Delaye, V., Persico, A., Roule, A., Bernard, M., Sabbione, C., Blachier, D., Sousa, V., Perniola, L., Maitrejean, S., Cabrini, A., Torelli, G., Zuliani, P., Annunziata, R., Palumbo, E., Borghi, M., Reimbold, G., De Salvo, B.

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Investigation of the physical mechanisms governing data-retention in down to 10nm nano-trench Al2O3/CuTeGe conductive bridge RAM (CBRAM) by Guy, J., Molas, G., Vianello, E., Longnos, F., Blanc, S., Carabasse, C., Bernard, M., Nodin, J. F., Toffoli, A., Cluzel, J., Blaise, P., Dorion, P., Cueto, O., Grampeix, H., Souchier, E., Cabout, T., Brianceau, P., Balan, V., Roule, A., Maitrejean, S., Perniola, L., De Salvo, B.

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A 16nm FinFET CMOS technology for mobile SoC and computing applications by Shien-Yang Wu, Lin, C. Y., Chiang, M. C., Liaw, J. J., Cheng, J. Y., Yang, S. H., Liang, M., Miyashita, T., Tsai, C. H., Hsu, B. C., Chen, H. Y., Yamamoto, T., Chang, S. Y., Chang, V. S., Chang, C. H., Chen, J. H., Chen, H. F., Ting, K. C., Wu, Y. K., Pan, K. H., Tsui, R. F., Yao, C. H., Chang, P. R., Lien, H. M., Lee, T. L., Lee, H. M., Chang, W., Chang, T., Chen, R., Yeh, M., Chen, C. C., Chiu, Y. H., Chen, Y. H., Huang, H. C., Lu, Y. C., Chang, C. W., Tsai, M. H., Liu, C. C., Chen, K. S., Kuo, C. C., Lin, H. T., Jang, S. M., Ku, Y.

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High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond by Liu, Q., Vinet, M., Gimbert, J., Loubet, N., Wacquez, R., Grenouillet, L., Le Tiec, Y., Khakifirooz, A., Nagumo, T., Cheng, K., Kothari, H., Chanemougame, D., Chafik, F., Guillaumet, S., Kuss, J., Allibert, F., Tsutsui, G., Li, J., Morin, P., Mehta, S., Johnson, R., Edge, L. F., Ponoth, S., Levin, T., Kanakasabapathy, S., Haran, B., Bu, H., Bataillon, J.-L, Weber, O., Faynot, O., Josse, E., Haond, M., Kleemeier, W., Khare, M., Skotnicki, T., Luning, S., Doris, B., Celik, M., Sampson, R.

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A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications by Boeuf, F., Cremer, S., Vulliet, N., Pinguet, T., Mekis, A., Masini, G., Verslegers, L., Sun, P., Ayazi, A., Hon, N-K, Sahni, S., Chi, Y., Orlando, B., Ristoiu, D., Farcy, A., Leverd, F., Broussous, L., Pelissier-Tanon, D., Richard, C., Pinzelli, L., Beneyton, R., Gourhant, O., Gourvest, E., Le-Friec, Y., Monnier, D., Brun, P., Guillermet, M., Benoit, D., Haxaire, K., Manouvrier, J. R., Jan, S., Petiton, H., Carpentier, J. F., Quemerais, T., Durand, C., Gloria, D., Fourel, M., Battegay, F., Sanchez, Y., Batail, E., Baron, F., Delpech, P., Salager, L., De Dobbelaere, P., Sautreuil, B.

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Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current by Yang Yin Chen, Komura, Masanori, Degraeve, Robin, Govoreanu, Bogdan, Goux, Ludovic, Fantini, Andrea, Raghavan, Naga, Clima, Sergiu, Leqi Zhang, Belmonte, Attilio, Redolfi, Augusto, Kar, Gouri Sankar, Groeseneken, Guido, Wouters, Dirk J., Jurczak, Malgorzata

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Techniques towards GaN power transistors with improved high voltage dynamic switching properties by Wurfl, J., Hilt, O., Bahat-Treidel, E., Zhytnytska, R., Kotara, P., Brunner, F., Krueger, O., Weyers, M.

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Monolithic 3D chip integrated with 500ns NVM, 3ps logic circuits and SRAM by Chang-Hong Shen, Jia-Min Shieh, Tsung-Ta Wu, Wen-Hsien Huang, Chih-Chao Yang, Chih-Jen Wan, Chein-Din Lin, Hsing-Hsiang Wang, Bo-Yuan Chen, Guo-Wei Huang, Yu-Chung Lien, Wong, Simon, Chieh Wang, Yin-Chieh Lai, Chien-Fu Chen, Meng-Fan Chang, Chenming Hu, Fu-Liang Yang

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Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI by Grasser, T., Rott, K., Reisinger, H., Waltl, M., Wagner, P., Schanovsky, F., Goes, W., Pobegen, G., Kaczer, B.

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High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOx gate stacks and strain modulation by Zhang, R., Chern, W., Yu, X., Takenaka, M., Hoyt, J. L., Takagi, S.

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Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell by Govoreanu, B., Redolfi, A., Zhang, L., Adelmann, C., Popovici, M., Clima, S., Hody, H., Paraschiv, V., Radu, I. P., Franquet, A., Liu, J.-C, Swerts, J., Richard, O., Bender, H., Altimime, L., Jurczak, M.

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Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode by Euijun Cha, Jiyong Woo, Daeseok Lee, Sangheon Lee, Jeonghwan Song, Yunmo Koo, Jihyun Lee, Chan Gyung Park, Moon Young Yang, Kamiya, Katsumasa, Shiraishi, Kenji, Magyari-Kope, Blanka, Nishi, Yoshio, Hyunsang Hwang

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Total current collapse in high-voltage GaN MIS-HEMTs induced by Zener trapping by Jin, D., Joh, J., Krishnan, S., Tipirneni, N., Pendharkar, S., del Alamo, J. A.

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Conductive-bridge memory (CBRAM) with excellent high-temperature retention by Jameson, J. R., Blanchard, P., Cheng, C., Dinh, J., Gallo, A., Gopalakrishnan, V., Gopalan, C., Guichet, B., Hsu, S., Kamalanathan, D., Kim, D., Koushan, F., Kwan, M., Law, K., Lewis, D., Ma, Y., McCaffrey, V., Park, S., Puthenthermadam, S., Runnion, E., Sanchez, J., Shields, J., Tsai, K., Tysdal, A., Wang, D., Williams, R., Kozicki, M. N., Wang, J., Gopinath, V., Hollmer, S., Van Buskirk, M.

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Heterojunction TFET Scaling and resonant-TFET for steep subthreshold slope at sub-9nm gate-length by Avci, Uygar E., Young, Ian A.

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Integrated UHF a-IGZO energy harvester for passive RFID tags by Chasin, Adrian, Volskiy, Vladimir, Libois, Michael, Ameys, Marc, Nag, Manoj, Rockele, Maarten, Myny, Kris, Steudel, Soeren, Schols, Sarah, Vandenbosch, Guy A. E., de Raedt, Walter, Genoe, Jan, Gielen, Georges, Heremans, Paul

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Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification by Lee, M. H., Lin, J-C, Wei, Y-T, Chen, C-W, Tu, W-H, Zhuang, H-K, Tang, M.

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Analytic model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM by Huang, P., Chen, B., Wang, Y. J., Zhang, F. F., Shen, L., Liu, R., Zeng, L., Du, G., Zhang, X., Gao, B., Kang, J. F., Liu, X. Y., Wang, X. P., Weng, B. B., Tang, Y. Z., Lo, G.-Q, Kwong, D.-L

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