Atomic migration in phase change materials by Novielli, G., Ghetti, A., Varesi, E., Mauri, A., Sacco, R.

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Carbon nanotube complementary logic based on Erbium contacts and self-assembled high purity solution tubes by Shu-Jen Han, Oida, Satoshi, Hongsik Park, Hannon, James B., Tulevski, George S., Haensch, Wilfried

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Negative bias temperature instability lifetime prediction: Problems and solutions by Ji, Z., Hatta, S. F. W. M., Zhang, J. F., Ma, J. G., Zhang, W., Soin, N., Kaczer, B., De Gendt, S., Groeseneken, G.

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Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies by Zhikai Tang, Qimeng Jiang, Sen Huang, Yunyou Lu, Shu Yang, Cheng Liu, Xi Tang, Shenghou Liu, Baikui Li, Chen, Kevin J.

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Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5) by Ran Cheng, Bin Liu, Pengfei Guo, Yue Yang, Qian Zhou, Xiao Gong, Yuan Dong, Yi Tong, Bourdelle, Konstantin, Daval, Nicolas, Delprat, Daniel, Bich-Yen Nguyen, Augendre, Emmanuel, Yee-Chia Yeo

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First demonstration of RRAM patterned by block copolymer self-assembly by Yi Wu, He Yi, Zhiping Zhang, Zizhen Jiang, Joon Sohn, Wong, Simon, Wong, H.-S Philip

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Threshold behavior of the drift region: The missing piece in LDMOS modeling by Sque, S. J., Scholten, A. J., Aarts, A. C. T., Klaassen, D. B. M.

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Channel-stacked NAND flash memory with layer selection by multi-level operation (LSM) by Kim, Wandong, Seo, Joo Yun, Kim, Yoon, Park, Se Hwan, Lee, Sang Ho, Baek, Myung Hyun, Lee, Jong-Ho, Park, Byung-Gook

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Acoustically-engineered multi-port AlN-on-silicon resonators for accurate temperature sensing by Tabrizian, Roozbeh, Ayazi, Farrokh

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Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability by Asenov, A., Cheng, B., Wang, X., Brown, A. R., Reid, D., Millar, C., Alexander, C.

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Three-dimensional structures for high saturation signals and crosstalk suppression in 1.20 μm pixel back-illuminated CMOS image sensor by Shinohara, T., Watanabe, K., Arakawa, S., Kawashima, H., Kawashima, A., Abe, T., Yanagita, T., Ohta, K., Inada, Y., Onizuka, M., Nakayama, H., Tateshita, Y., Morikawa, T., Ohno, K., Sugimoto, D., Kadomura, S., Hirayama, T.

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Mechanically flexible vertically integrated a-IGZO thin-film transistors with 500 nm channel length fabricated on free standing plastic foil by Petti, L., Aguirre, P., Munzenrieder, N., Salvatore, G. A., Zysset, C., Frutiger, A., Buthe, L., Vogt, C., Troster, G.

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A low-cost, forming-free WOx ReRAM using novel self-aligned photo-induced oxidation by Feng-Min Lee, Yu-Yu Lin, Wei-Chih Chien, Erh-Kun Lai, Dai-Ying Lee, Chih-Chieh Yu, Han-Hui Hsu, Ming-Hsiu Lee, Hsiang-Lan Lung, Kuang-Yeu Hsieh, Chih-Yuan Lu

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Quantum-barriers and ground-plane isolation: A path for scaling bulk-FinFET technologies to the 7 nm-node and beyond by Eneman, G., Hellings, G., De Keersgieter, A., Collaert, N., Thean, A.

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Quantum transport simulations on the feasibility of the bilayer pseudospin field effect transistor (BiSFET) by Xuehao Mou, Register, Leonard F., Banerjee, Sanjay K.

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Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model by Degraeve, R., Toledano-Luque, M., Arreghini, A., Tang, B., Capogreco, E., Lisoni, J., Roussel, Ph, Kaczer, B., Van den bosch, G., Groeseneken, G., Van Houdt, J.

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Low Dit high-k/In0.53Ga0.47As gate stack, with CET down to 0.73 nm and thermally stable silicide contact by suppression of interfacial reaction by Zadeh, D. Hassan, Oomine, H., Kakushima, K., Kataoka, Y., Nishiyama, A., Sugii, N., Wakabayashi, H., Tsutsui, K., Natori, K., Iwai, H.

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Gate-controlled Schottky barrier modulation for superior photoresponse of MoS2 field effect transistor by Hua-Min Li, Dae-Yeong Lee, Min-Sup Choi, De-Shun Qu, Xiao-Chi Liu, Chang-Ho Ra, Won Jong Yoo

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Self-heating effects in ultra-scaled Si nanowire transistors by Rhyner, Reto, Luisier, Mathieu

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Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation by Ronghua Wang, Li, G., Guo, J., Song, B., Verma, J., Hu, Z., Yue, Y., Nomoto, K., Ganguly, S., Rouvimov, S., Gao, X., Laboutin, O., Cao, Y., Johnson, W., Fay, P., Jena, D., Xing, Huili Grace

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