Sub-60mV-swing negative-capacitance FinFET without hysteresis by Kai-Shin Li, Pin-Guang Chen, Tung-Yan Lai, Chang-Hsien Lin, Cheng-Chih Cheng, Chun-Chi Chen, Yun-Jie Wei, Yun-Fang Hou, Ming-Han Liao, Min-Hung Lee, Min-Cheng Chen, Jia-Min Sheih, Wen-Kuan Yeh, Fu-Liang Yang, Salahuddin, Sayeef, Chenming Hu

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Scaling-up resistive synaptic arrays for neuro-inspired architecture: Challenges and prospect by Yu, Shimeng, Chen, Pai-Yu, Cao, Yu, Xia, Lixue, Wang, Yu, Wu, Huaqiang

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NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning by Kim, S., Ishii, M., Lewis, S., Perri, T., BrightSky, M., Kim, W., Jordan, R., Burr, G. W., Sosa, N., Ray, A., Han, J.-P, Miller, C., Hosokawa, K., Lam, C.

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Large-scale neural networks implemented with non-volatile memory as the synaptic weight element: Comparative performance analysis (accuracy, speed, and power) by Burr, G. W., Narayanan, P., Shelby, R. M., Sidler, S., Boybat, I., di Nolfo, C., Leblebici, Y.

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Efficient in-memory computing architecture based on crossbar arrays by Bing Chen, Fuxi Cai, Jiantao Zhou, Wen Ma, Sheridan, Patrick, Lu, Wei D.

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Design space and origin of off-state leakage in GaN vertical power diodes by Zhang, Y., Wong, H.-Y, Sun, M., Joglekar, S., Yu, L., Braga, N. A., Mickevicius, R. V., Palacios, T.

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Device and system level design considerations for analog-non-volatile-memory based neuromorphic architectures by Eryilmaz, S. Burc, Kuzum, Duygu, Shimeng Yu, Wong, H.-S Philip

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Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs by Moens, P., Banerjee, A., Uren, M. J., Meneghini, M., Karboyan, S., Chatterjee, I., Vanmeerbeek, P., Casar, M., Liu, C., Salih, A., Zanoni, E., Meneghesso, G., Kuball, M., Tack, M.

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STT-MRAM with double magnetic tunnel junctions by Hu, G., Lee, J. H., Nowak, J. J., Sun, J. Z., Harms, J., Annunziata, A., Brown, S., Chen, W., Kim, Y. H., Lauer, G., Liu, L., Marchack, N., Murthy, S., O'Sullivan, E. J., Park, J. H., Reuter, M., Robertazzi, R. P., Trouilloud, P. L., Zhu, Y., Worledge, D. C.

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Neuromorphic architectures for spiking deep neural networks by Indiveri, Giacomo, Corradi, Federico, Ning Qiao

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Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells by Mulaosmanovic, H., Slesazeck, S., Ocker, J., Pesic, M., Muller, S., Flachowsky, S., Muller, J., Polakowski, P., Paul, J., Jansen, S., Kolodinski, S., Richter, C., Piontek, S., Schenk, T., Kersch, A., Kunneth, C., van Bentum, R., Schroder, U., Mikolajick, T.

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Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells by Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Banerjee, Writam, Ling Li, Jianfeng Gao, Nianduan Lu, Chung, Steve S., Jing Li, Ming Liu

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Single suspended InGaAs nanowire MOSFETs by Zota, Cezar B., Wernersson, Lars-Erik, Lind, Erik

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20nm DRAM: A new beginning of another revolution by Park, J. M., Hwang, Y. S., Kim, S.-W, Han, S. Y., Park, J. S., Kim, J., Seo, J. W., Kim, B. S., Shin, S. H., Cho, C. H., Nam, S. W., Hong, H. S., Lee, K. P., Jin, G. Y., Jung, E. S.

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Cu BEOL compatible selector with high selectivity (>107), extremely low off-current (∼pA) and high endurance (>1010) by Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Banerjee, Writam, Ling Li, Nianduan Lu, Ming Liu

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Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz by Makiyama, K., Ozaki, S., Ohki, T., Okamoto, N., Minoura, Y., Niida, Y., Kamada, Y., Joshin, K., Watanabe, K., Miyamoto, Y.

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Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off <0.2V, and hysteresis-free strategies by Lee, M. H., Chen, P.-G, Liu, C., Chu, K.-Y, Cheng, C.-C, Xie, M.-J, Liu, S.-N, Lee, J.-W, Huang, S.-J, Liao, M.-H, Tang, M., Li, K.-S, Chen, M.-C

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A floating gate based 3D NAND technology with CMOS under array by Parat, Krishna, Dennison, Chuck

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Development of a neuromorphic computing system by Shi, Luping, Pei, Jing, Deng, Ning, Wang, Dong, Deng, Lei, Wang, Yu, Zhang, Youhui, Chen, Feng, Zhao, Mingguo, Song, Sen, Zeng, Fei, Li, Guoqi, Li, Huanglong, Ma, Cheng

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A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems by Wong, K.-Y Roy, Kwan, M.-H, Yao, F.-W, Tsai, M.-W, Lin, Y.-S, Chang, Y.-C, Chen, P.-C, Su, R.-Y, Yu, J.-L, Yang, F.-J, Lansbergen, G. P., Hsiung, C.-W, Lai, Y.-A, Chiu, K.-L, Chen, C. F., Lin, M.-C, Wu, H.-Y, Chiang, C.-H, Liu, S.-D, Chiu, H.-C, Liu, P.-C, Chen, C.-M, Yu, C.-Y, Tsai, C.-S, Wu, C.-B, Lin, B., Chang, M.-H, You, J.-S, Wang, S.-P, Chen, L.-C, Liao, Y.-Y, Tsai, L. Y., Tsai, Tom, Tuan, H. C., Kalnitsky, Alex

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