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Search Results - Çokduygulular, E.
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Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility
by
Donmez, O
,
Ayd n, M
,
Ardal
,
Y ld r m, S
,
T ra, E
,
Nutku, F
,
Çetinkaya, Ç
,
Çokduygulular, E
,
Puustinen, J
,
Hilska, J
,
Guina, M
,
Erol, A
Published in
Semiconductor science and technology
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Effect of Annealing on the Surface Morphology and Current–Voltage Characterization of a CZO Structure Prepared by RF Magnetron Sputtering
by
Kınacı, B.
,
Çelik, E.
,
Çokduygulular, E.
,
Çetinkaya, Ç.
,
Yalçın, Y.
,
Efkere, H. İ.
,
Özen, Y.
,
Sönmez, N. A.
,
Özçelik, S.
Published in
Semiconductors (Woodbury, N.Y.)
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A study of electric transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures under a high electric field
by
Sarcan, F
,
Mutlu, S
,
Cokduygulular, E
,
Donmez, O
,
Erol, A
,
Puustinen, J
,
Guina, M
Published in
Semiconductor science and technology
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Institute Of Physics:jisc Collections:iop Publishing Journal Archive 1874-1998 (Access Period 2020 To 2024)
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