Search Results - Ólafsson, H.Ö.

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  1. 1
    Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC

    Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC by Rudenko, T.E., Osiyuk, I.N., Tyagulski, I.P., Ólafsson, H.Ö., Sveinbjörnsson, E.Ö.

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  2. 2
    High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

    High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material by Gudjonsson, G., Olafsson, H.O., Allerstam, F., Nilsson, P.-A., Sveinbjornsson, E.O., Zirath, H., Rodle, T., Jos, R.

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  3. 3
    Analysis of the electron traps at the 4H-SiC/SiO 2 interface using combined CV/thermally stimulated current measurements

    Analysis of the electron traps at the 4H-SiC/SiO 2 interface using combined CV/thermally stimulated current measurements by Rudenko, T.E., Ólafsson, H.Ö., Sveinbjörnsson, E.Ö., Osiyuk, I.P., Tyagulski, I.P.

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  4. 4
    Analysis of the electron traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements

    Analysis of the electron traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements by RUDENKO, T. E, OLAFSSON, H. O, SVEINBJÖRNSSON, E. O, OSIYUK, I. P, TYAGULSKI, I. P

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  5. 5
    High-power-density 4H-SiC RF MOSFETs

    High-power-density 4H-SiC RF MOSFETs by Gudjonsson, G., Allerstam, F., Olafsson, H.O., Nilsson, P.A., Hjelmgren, H., Andersson, K., Sveinbjornsson, E.O., Zirath, H., Rodle, T., Jos, R.

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  6. 6
    Hydrogen passivation of AlxGa1−xAs/GaAs studied by surface photovoltage spectroscopy

    Hydrogen passivation of AlxGa1−xAs/GaAs studied by surface photovoltage spectroscopy by Olafsson, H.Ö, Gudmundsson, J.T, Svavarsson, H.G, Gislason, H.P

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