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    Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors

    Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors by Šimukovi, A, Matulionis, A, Liberis, J, Šermukšnis, E, Sakalas, P, Zhang, F, Leach, J H, Avrutin, V, Morkoç, H

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