Search Results - 刘超 任志伟 陈鑫 赵璧君 王幸福 尹以安 李述体

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    Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

    Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer by 刘超 任志伟 陈鑫 赵璧君 王幸福 尹以安 李述体

    Published in Chinese physics B
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