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Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations
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吕伟锋 王光义 林弥 孙玲玲
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Chinese physics letters
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Chinese Physics Letters
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中国物理快报:英文版
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Capacitance
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Computer Simulation
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Correlation
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Gates
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Metal Oxide Semiconductors
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Mosfet
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N-Type Semiconductors
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Physical Sciences
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金属氧化物半导体场效应晶体管
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Institute Of Physics:jisc Collections:iop Publishing Read And Publish 2024-2025 (Reading List)
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Institute Of Physics Iopscience Extra
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