Search Results - 宋坤 柴常春 杨银堂 贾护军 张现军 陈斌

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    Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models

    Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models by 宋坤 柴常春 杨银堂 贾护军 张现军 陈斌

    Published in 半导体学报
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