Search Results - 张健 何进 周幸叶 张立宁 马玉涛 陈沁 张勖凯 杨张 王睿斐 韩雨 陈文新

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    A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

    A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel by 张健 何进 周幸叶 张立宁 马玉涛 陈沁 张勖凯 杨张 王睿斐 韩雨 陈文新

    Published in Chinese physics B
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