Search Results - 张现军 杨银堂 段宝兴 陈斌 柴常春 宋坤

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    Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal-semiconductor field-effect transistor

    Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal-semiconductor field-effect transistor by 张现军 杨银堂 段宝兴 柴常春 宋坤 陈斌

    Published in Chinese physics B
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  2. 2
    New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer

    New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer by 张现军 杨银堂 段宝兴 陈斌 柴常春 宋坤

    Published in Chinese physics B
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