Search Results - 彭超 胡志远 宁冰旭 黄辉祥 樊双 张正远 毕大炜 恩云飞

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    Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

    Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs by 彭超 胡志远 宁冰旭 黄辉祥 樊双 张正远 毕大炜 恩云飞

    Published in Chinese physics B
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