Search Results - 徐昊 杨红 王艳蓉 王文武 罗维春 祁路伟 李俊峰 赵超 陈大鹏 叶甜春

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  1. 1
    Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

    Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations by 徐昊 杨红 罗维春 徐烨峰 王艳蓉 唐波 王文武 祁路伟 李俊峰 闫江 朱慧珑 赵超 陈大鹏 叶甜春

    Published in Chinese physics B
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  2. 2
    Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

    Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation by 徐昊 杨红 王艳蓉 王文武 罗维春 祁路伟 李俊峰 赵超 陈大鹏 叶甜春

    Published in Chinese physics B
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