Search Results - 李祥东 张进成 郭振兴 江海清 邹瑜 张苇杭 何云龙 蒋仁渊 赵胜雷 郝跃

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    Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050 mA/mm

    Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050 mA/mm by 李祥东 张进成 郭振兴 江海清 邹瑜 张苇杭 何云龙 蒋仁渊 赵胜雷 郝跃

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