擬似水素としてのミュオンと第一原理計算の組み合わせによる水素の電子状態研究 by 平石, 雅俊, 小嶋, 健児, 岡部, 博孝, 幸田, 章宏, 門野, 良典, 井手, 啓介, 松石, 聡, 雲見, 日出也, 神谷, 利夫, 細野, 秀雄

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Bandgap Optimization of Perovskite Semiconductors for Photovoltaic Applications by Xiao, Zewen, Zhou, Yuanyuan, Hosono, Hideo, Kamiya, Toshio, Padture, Nitin P.

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Material characteristics and applications of transparent amorphous oxide semiconductors by Kamiya, Toshio, Hosono, Hideo

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Ambipolar Oxide Thin-Film Transistor by Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

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Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs by Hosono, Hideo, Kim, Junghwan, Toda, Yoshitake, Kamiya, Toshio, Watanabe, Satoru

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Electric field-induced superconducting transition of insulating FeSe thin film at 35 K by Hanzawa, Kota, Sato, Hikaru, Hiramatsu, Hidenori, Kamiya, Toshio, Hosono, Hideo

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Quantum confinement effects in amorphous In–Ga–Zn–O thin-film transistors with quantum well channel by Abe, Katsumi, Kamiya, Toshio, Hosono, Hideo

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Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects by Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

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Electron Confinement in Channel Spaces for One-Dimensional Electride by Zhang, Yaoqing, Xiao, Zewen, Kamiya, Toshio, Hosono, Hideo

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Advantageous grain boundaries in iron pnictide superconductors by Katase, Takayoshi, Ishimaru, Yoshihiro, Tsukamoto, Akira, Hiramatsu, Hidenori, Kamiya, Toshio, Tanabe, Keiichi, Hosono, Hideo

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Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing by Nomura, Kenji, Kamiya, Toshio, Ohta, Hiromichi, Hirano, Masahiro, Hosono, Hideo

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Amorphous oxide channel TFTs by Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

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Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O by Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

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Ligand-Hole in [SnI6] Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6 by Xiao, Zewen, Lei, Hechang, Zhang, Xiao, Zhou, Yuanyuan, Hosono, Hideo, Kamiya, Toshio

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Iron-Based Layered Superconductor:  LaOFeP by Kamihara, Yoichi, Hiramatsu, Hidenori, Hirano, Masahiro, Kawamura, Ryuto, Yanagi, Hiroshi, Kamiya, Toshio, Hosono, Hideo

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Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layers by Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

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p -channel thin-film transistor using p -type oxide semiconductor, SnO by Ogo, Yoichi, Hiramatsu, Hidenori, Nomura, Kenji, Yanagi, Hiroshi, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo

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Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors by Ide, Keisuke, Kikuchi, Yutomo, Nomura, Kenji, Kimura, Mutsumi, Kamiya, Toshio, Hosono, Hideo

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Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films by Nomura, Kenji, Kamiya, Toshio, Ohta, Hiromichi, Ueda, Kazushige, Hirano, Masahiro, Hosono, Hideo

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Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping by Kamiya, T., Nomura, K., Hosono, H.

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