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Search Results - 许高博 徐秋霞
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A high performance HfSiON/TaN NMOSFET fabricated using a gate-last process
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许高博 徐秋霞 殷华湘 周华杰 杨涛 牛洁斌 余嘉晗 李俊峰 赵超
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Chinese physics B
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Thermal stability of HfTaON films prepared by physical vapor deposition
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许高博 徐秋霞
Published in
Journal of semiconductors
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Peer Reviewed
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Journal Title
Chinese Physics B
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Journal Of Semiconductors
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中国物理B:英文版
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Subjects
Physical Sciences
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Physics
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Science & Technology
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Activation
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Devices
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Dielectrics
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Dummies
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Electric Potential
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Gate-Last Process
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Gates
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Hfsion
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Hftaon
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Interfacial Layer
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Mosfets
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Mos管
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Nmos场效应晶体管
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Physical Vapor Deposition
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Physics, Condensed Matter
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Physics, Multidisciplinary
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Planarization
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Institute Of Physics:jisc Collections:iop Publishing Read And Publish 2024-2025 (Reading List)
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Institute Of Physics Iopscience Extra
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