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    Influence of the Diamond Layer on the Electrical Characteristics of AIGaN/GaN High-Electron-Mobility Transistors

    Influence of the Diamond Layer on the Electrical Characteristics of AIGaN/GaN High-Electron-Mobility Transistors by 郑雪峰 王奥琛 侯晓慧 王颖哲 文浩宇 王冲 卢阳 毛维 马晓华 郝跃

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