擬似水素としてのミュオンと第一原理計算の組み合わせによる水素の電子状態研究 by 平石, 雅俊, 小嶋, 健児, 岡部, 博孝, 幸田, 章宏, 門野, 良典, 井手, 啓介, 松石, 聡, 雲見, 日出也, 神谷, 利夫, 細野, 秀雄

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Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors by Hanyu, Yuichiro, Domen, Kay, Nomura, Kenji, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening by Ide, Keisuke, Ishikawa, Kyohei, Tang, Haochun, Katase, Takayoshi, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films by Tang, Haochun, Ishikawa, Kyohei, Ide, Keisuke, Hiramatsu, Hidenori, Ueda, Shigenori, Ohashi, Naoki, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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(Invited) Advances in Oxide Thin-Film Transistors in Recent Decade and Their Future by Kumomi, Hideya, Kamiya, Toshio, Hosono, Hideo

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Multiple Roles of Hydrogen Treatments in Amorphous In-Ga-Zn-O Films by Tang, Haochun, Kishida, Yosuke, Ide, Keisuke, Toda, Yoshitake, Hiramatsu, Hidenori, Matsuishi, Satoru, Ueda, Shigenori, Ohashi, Naoki, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In-Ga-Zn-O thin-film transistors by Ide, Keisuke, Kikuchi, Mitsuho, Ota, Masato, Sasase, Masato, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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Charge Compensation by Excess Oxygen in Amorphous In-Ga-Zn-O Films Deposited by Pulsed Laser Deposition by Orui, Takatoshi, Herms, Johannes, Hanyu, Yuichiro, Ueda, Shigenori, Watanabe, Ken, Sakaguchi, Isao, Ohashi, Naoki, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering by Miyase, Takaya, Watanabe, Ken, Sakaguchi, Isao, Ohashi, Naoki, Domen, Kay, Nomura, Kenji, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure by Grochowski, Jakub, Hanyu, Yuichiro, Abe, Katsumi, Kaczmarski, Jakub, Dyczewski, Jan, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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Operation model with carrier-density dependent mobility for amorphous In–Ga–Zn–O thin-film transistors by Abe, Katsumi, Takahashi, Kenji, Sato, Ayumu, Kumomi, Hideya, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

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Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs by Hanyu, Yuichiro, Abe, Katsumi, Domen, Kay, Nomura, Kenji, Hiramatsu, Hidenori, Kumomi, Hideya, Hosono, Hideo, Kamiya, Toshio

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Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films by Liao, Min, Xiao, Zewen, Ran, Fan-Yong, Kumomi, Hideya, Kamiya, Toshio, Hosono, Hideo

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