Search Results - 韩铁成 赵红东 杨磊 王杨

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    Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

    Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier by 韩铁成 赵红东 杨磊 王杨

    Published in Chinese physics B
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