Search Results - 黄杰 黎明 赵倩 顾雯雯 刘纪美

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    Hetero-epitaxy of L_g= 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications

    Hetero-epitaxy of L_g= 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications by 黄杰 黎明 赵倩 顾雯雯 刘纪美

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