Search Results - AMHOUCHE, Y

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  1. 1
    CHARACTERIZATION OF SERIES RESISTANCES AND MOBILITY ATTENUATION PHENOMENA IN SHORT CHANNEL MOS TRANSISTORS

    CHARACTERIZATION OF SERIES RESISTANCES AND MOBILITY ATTENUATION PHENOMENA IN SHORT CHANNEL MOS TRANSISTORS by El Abbassi, A., Amhouche, Y., Bendada, E., Rmaily, R., Raïs, K.

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  2. 2
    AN ACCURATE METHOD FOR EXTRACTING THE CRITICAL FIELD IN SHORT CHANNEL NMOS DEVICES

    AN ACCURATE METHOD FOR EXTRACTING THE CRITICAL FIELD IN SHORT CHANNEL NMOS DEVICES by AMHOUCHE, Y, EL ABBASSI, A, RAÏS, K, RMAILY, R

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  3. 3
    A PHYSICAL MODEL FOR MOSFET DRAIN CURRENT IN NON-OHMIC REGIME USING OHMIC REGIME OPERATION

    A PHYSICAL MODEL FOR MOSFET DRAIN CURRENT IN NON-OHMIC REGIME USING OHMIC REGIME OPERATION by EL ABBASSI, A, AMHOUCHE, Y, RAÏS, K, RMAILY, R

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  4. 4
    NEW METHOD FOR DETERMINATION OF DRAIN SATURATION VOLTAGE IN SHORT CHANNEL MOS DEVICES BETWEEN LIQUID HELIUM TO ROOM TEMPERATURE

    NEW METHOD FOR DETERMINATION OF DRAIN SATURATION VOLTAGE IN SHORT CHANNEL MOS DEVICES BETWEEN LIQUID HELIUM TO ROOM TEMPERATURE by AMHOUCHE, Y, EL ABBASSI, A, RAÏS, K, BENDADA, E, RMAILYA, R

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  5. 5
    ANALYSIS OF TEMPERATURE AND DRAIN VOLTAGE DEPENDENCE OF SUBSTRATE CURRENT IN DEEP SUBMICROMETER MOSFET'S

    ANALYSIS OF TEMPERATURE AND DRAIN VOLTAGE DEPENDENCE OF SUBSTRATE CURRENT IN DEEP SUBMICROMETER MOSFET'S by Y. AMHOUCHE, A. EL ABBASSI, K. RAIS, R. RMAILY

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  6. 6
    New method for determination of drain saturation voltage in submicrometer MOSFETs between liquid helium to room temperature

    New method for determination of drain saturation voltage in submicrometer MOSFETs between liquid helium to room temperature by Amhouche, Y., El Abbassi, A., Rais, K., Rmaily, R.

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  7. 7
    An accurate method for extracting the critical field in short channel NMOS devices

    An accurate method for extracting the critical field in short channel NMOS devices by Amhouche, Y., El Abbassi, A., Rais, K., Rmaily, R.

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  8. 8
    Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep SubmicrometerMOSFET′S

    Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep SubmicrometerMOSFET′S by Amhouche, Y., El Abbassi, A., Raïs, K., Rmaily, R.

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  9. 9
    New Method for Determination of Drain Saturation Voltage in Short Channel MOS DevicesBetween Liquid Helium to Room Temperature

    New Method for Determination of Drain Saturation Voltage in Short Channel MOS DevicesBetween Liquid Helium to Room Temperature by Amhouche, Y., El Abbassi, A., Raïs, K., Bendada, E., Rmaily, R.

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