Lattice compression from conduction electrons in heavily doped Si:As by CARGILL, G. S, ANGILELLO, J, KAVANAGH, K. L

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A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation Temperatures by Irene, E. A., Tierney, E., Angilello, J.

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Thermal stability of Si1-xCx/Si strained layer superlattices by GOORSKY, M. S, IYER, S. S, EBERL, K, LEGOUES, F, ANGILELLO, J, CARDONE, F

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Disorder in Al-Li-Cu and Al-Mn-Si Icosahedral Alloys by Heiney, P. A., Bancel, P. A., Horn, P. M., Jordan, J. L., LaPlaca, S., Angilello, J., Gayle, F. W.

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Properties of diamond structure SnGe films grown by molecular beam epitaxy by Harwit, Alex, Pukite, P.R., Angilello, J., Iyer, S.S.

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Lanthanide gallate perovskite-type substrates for epitaxial, high-Tc superconducting Ba2YCu3O7-δ films by GIESS, E. A, SANDSTROM, R. L, GALLAGHER, W. J, SHINDE, S. L, COOK, R. F, COOPER, E. I, O'SULLIVAN, E. J. M, ROLDAN, J. M, SEGMÜLLER, A. P, ANGILELLO, J

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Crystallization kinetics of amorphous NiSix films by THOMPSON, R. D, ANGILELLO, J, TU, K. N

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Stresses and radiation damage in Ar+ and Ti+ ion-implanted silicon by MADAKSON, P, ANGILELLO, J

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Contact reaction between Si and Pd-W alloy films by Olowolafe, J. O., Tu, K. N., Angilello, J.

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Oriented growth of ultrathin tungsten films on sapphire substrates by SOUK, J. H, SEGMULLER, A, ANGILELLO, J

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Preparation and some properties of sputtered Co/U-As multilayers by Plaskett, T.S., Fumagalli, P., McGuire, T.R., Gambino, R.J., Bojarczuk, N.A., Angilello, J.

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Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures : in-plane epitaxial relation and channeling analysis by CHIN-AN CHANG, LIU, J. C, ANGILELLO, J

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Flash X-ray Microscopy by McCorkle, R., Angilello, J., Coleman, G., Feder, R., La Placa, S. J.

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Etch pits and dislocations in {100} GaAs wafers by Angilello, J., Potemski, R. M., Woolhouse, G. R.

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Thermal stability of Pb-alloy Josephson junction electrode materials. VII: Concentration range of single ε-phase Pb-Bi films used in counterelectrodes by MURAKAMI, M, HUANG, H. C. W, ANGILELLO, J, GILBERT, B. L

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Preparation and Characterization of Ruthenium Dioxide Crystals by Shafer, M. W., Figat, R. A., Olson, B., LaPlaca, S. J., Angilello, J.

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Tantalum silicide films deposited by dc sputtering by Angilello, J., Baglin, J. E. E., Cardone, F., Dempsey, J. J., d'Heurle, F. M., Irene, E. A., Maclnnes, R., Petersson, C. S., Savoy, R., Segmuller, A. P., Tierney, E.

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Al-Cu Alloy for Gas Panels by Brusic, V., d'Heurle, F. M., MacInnes, R. D., Alessandrini, E. I., Angilello, J., Dempsey, J. J., Sampogna, M.

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Crystallization kinetics of amorphous NiSi x films by Thompson, R.D., Angilello, J., Tu, K.N.

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Thermal stability of Si(1-x)C(x)/Si strained layer superlattices by Goorsky, M S, Iyer, S S, Eberl, K, LEGOUES, F, ANGILELLO, J, Cardone, F

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