0.13 \mu m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Avenier, G., Diop, M., Chevalier, P., Troillard, G., Loubet, N., Bouvier, J., Depoyan, L., Derrier, N., Buczko, M., Leyris, C., Boret, S., Montusclat, S., Margain, A., Pruvost, S., Nicolson, S.T., Yau, K.H.K., Revil, N., Gloria, D., Dutartre, D., Voinigescu, S.P., Chantre, A.

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Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI by Avenier, G., Fregonese, S., Chevalier, P., Bustos, J., Saguin, F., Schwartzmann, T., Maneux, C., Zimmer, T., Chantre, A.

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Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on >Thin-Film SOI Technology by Bellini, M., Phillips, S.D., Diestelhorst, R.M., Cheng, P., Cressler, J.D., Marshall, P.W., Turowski, M., Avenier, G., Chantre, A., Chevalier, P.

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A compact model for SiGe HBT on thin-film SOI by Fregonese, S., Avenier, G., Maneux, C., Chantre, A., Zimmer, T.

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A selective epitaxy collector module for high-speed Si/SiGe:C HBTs by Geynet, B., Chevalier, P., Brossard, F., Vandelle, B., Schwartzmann, T., Buczko, M., Avenier, G., Dutartre, D., Dambrine, G., Danneville, F., Chantre, A.

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Thin film SOI HBT: A study of the effect of substrate bias on the electrical characteristics by Fregonese, S., Avenier, G., Maneux, C., Chantre, A., Zimmer, T.

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Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs by Lacave, T, Chevalier, P, Campidelli, Y, Buczko, M, Depoyan, L, Berthier, L, Avenier, G, Gaquière, C, Chantre, A

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SiGe HBT / CMOS process thermal budget co-optimization in a 55-nm CMOS node by Gauthier, A., Chevalier, P., Avenier, G., Ribes, G., Rellier, M.-L, Campidelli, Y., Beneyton, R., Celi, D., Haury, G., Gaquiere, C.

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Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI by Fregonese, S., Avenier, G., Maneux, C., Chantre, A., Zimmer, T.

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Impact of BEOL stress on BiCMOS9MW HBTs by Canderle, E., Chevalier, P., Avenier, G., Derrier, N., Celi, D., Gaquiere, C.

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A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX by Chevalier, P., Pourchon, F., Lacave, T., Avenier, G., Campidelli, Y., Depoyan, L., Troillard, G., Buczko, M., Gloria, D., Celi, D., Gaquiere, C., Chantre, A.

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Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz by Chevalier, P., Lacave, T., Canderle, E., Pottrain, A., Carminati, Y., Rosa, J., Pourchon, F., Derrier, N., Avenier, G., Montagne, A., Balteanu, A., Dacquay, E., Sarkas, I., Celi, D., Gloria, D., Gaquiere, C., Voinigescu, S. P., Chantre, A.

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0.13mu$ m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Voinigescu, S P, Revil, N, Chevalier, P, Pruvost, S, Bouvier, J, Avenier, G, Troillard, G, Depoyan, L, Buczko, M, Montusclat, S, Margain, A, Nicolson, S T, Yau, K.H.K., Gloria, D, Chantre, A, Diop, M, Loubet, N, Derrier, N, Leyris, C

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Growth kinetic and doping of Si and SiGe epi layers on fullsheet substrates by Talbot, Alexandre, Avenier, Gregory, Vincent, Gilbert, Dutartre, Didier

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Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs by Canderle, E., Chevalier, P., Montagne, A., Moynet, L., Avenier, G., Boulenc, P., Buczko, M., Carminati, Y., Rosa, J., Gaquiere, C., Chantre, A.

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3-D Regional Transit Time Analysis of SiGe HBTs on Thin-Film SOI by Bellini, Marco, Cressler, J., Turowski, Marek, Avenier, Grégory, Chantre, Alain, Chevalier, Pascal

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0.13 [Formula Omitted]m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Avenier, G, Diop, M, Chevalier, P, Troillard, G, Loubet, N, Bouvier, J, Depoyan, L, Derrier, N, Buczko, M, Leyris, C, Boret, S, Montusclat, S, Margain, A, Pruvost, S, Nicolson, S.T, Yau, K.H.K, Revil, N, Gloria, D, Dutartre, D, Voinigescu, S.P, Chantre, A

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HBT device robustness against process variations in millimeter-wave BiCMOS technology by Avenier, G., Chevalier, P., Montagne, A., Parmigiani, L., Berthier, L., Renault, O., Oghdayan, E., Mathieu, M., Campidelli, Y., Dutartre, D., Chantre, A.

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0.13μm SiGe BiCMOS technology for mm-wave applications by Avenier, G., Chevalier, P., Troillard, G., Vandelle, B., Brossard, F., Depoyan, L., Buczko, M., Boret, S., Montusclat, S., Margain, A., Pruvost, S., Nicolson, S.T., Yau, K.H.K., Gloria, D., Dutartre, D., Voinigescu, S.P., Chantre, A.

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A transit time model for thin SOI Si/SiGe HBT by Fregonese, S., Avenier, G., Maneux, C., Chantre, A., Zimmer, T.

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