Comparative Ellipsometric Analysis of Silicon Carbide Polytypes 4H, 15R, and 6H Produced by a Modified Lely Method in the Same Growth Process by Avrov, D. D., Gorlyak, A. N., Lebedev, A. O., Luchinin, V. V., Markov, A. V., Osipov, A. V., Panov, M. F., Kukushkin, S. A.

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Thermodynamic Analysis of the Growth of Silicon Carbide Ingots in a Reducing Atmosphere by Avrov, D. D., Lebedev, A. O., Tairov, Yu. M.

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Generation of Frequency Combs by Quantum Cascade Lasers Emitting in the 8-μm Wavelength Range by Dudelev, V. V., Mikhailov, D. A., Babichev, A. V., Losev, S. N., Chistyakov, D. V., Kognovitskaya, E. A., Avrov, D. D., Slipchenko, S. O., Lyutetskii, A. V., Pikhtin, N. A., Gladyshev, A. G., Karachinsky, L. Ya, Novikov, I. I., Kuchinskii, V. I., Egorov, A. Yu, Sokolovskii, G. S.

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Defect structure of 4H silicon carbide ingots by Lebedev, A.O., Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Tairov, Yu.M., Fadeev, A.Yu

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Polytype inclusions and polytype stability in silicon-carbide crystals by Avrov, D. D., Lebedev, A. O., Tairov, Yu. M.

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The analysis of mass transfer in system β-SiC–α-SiC under silicon carbide sublimation growth by Avrov, D.D, Bakin, A.S, Dorozhkin, S.I, Rastegaev, V.P, Tairov, Yu.M

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Features of SiC single-crystals grown in vacuum using the LETI method by Rastegaev, V.P, Avrov, D.D, Reshanov, S.A, Lebedev, A.O

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Mechanisms of defect formation in ingots of 4H silicon carbide polytype by Avrov, D. D., Bulatov, A. V., Dorozhkin, S. I., Lebedev, A. O., Tairov, Yu. M., Fadeev, A. Yu

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Defect formation in silicon carbide large-scale ingots grown by sublimation technique by Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Lebedev, A.O., Tairov, Yu.M.

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Optimization of structural perfection of 4H-polytype silicon carbide ingots by Avrov, D. D., Dorozhkin, S. I., Lebedev, A. O., Tairov, Yu. M., Tregubova, A. S., Fadeev, A. Yu

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Domain formation during syntaxy of polytypes of silicon carbide by Avrov, D. D., Dorozhkin, S. I., Lebedev, A. O., Tairov, Yu. M.

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Growth of 4H-polytype silicon carbide ingots on (100) seeds by Avrov, D. D., Bulatov, A. V., Dorozhkin, S. I., Lebedev, A. O., Tairov, Yu. M.

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Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method by Avrov, D. D., Dorozhkin, S. I., Tairov, Yu. M., Fadeev, A. Yu, Lebedev, A. O.

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Defect structure of 4H silicon carbide ingots by LEBEDEV, A. O, AVROV, D. D, BULATOV, A. V, DOROZHKIN, S. I, TAIROV, Yu. M, FADEEV, A. Yu

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Silicon carbide as a material for high temperature posistors by Avrov, D.D., Bakin, A.S., Dorzhkin, S.I., Rastegaev, V.P., Tairov, Yu.M.

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Growth of SiC ingots with high ratea by Dorozhkin, Sergei I., Avrov, Dmitri D., Rastegaev, Vladimir P., Tairov, Yuri M.

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The analysis of mass transfer in system β-SiC-α-SiC under silicon carbide sublimation growth by AVROV, D. D, BAKIN, A. S, DOROZHKIN, S. I, RASTEGAEV, V. P, TAIROV, Yu. M

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Features of SiC single-crystals grown in vacuum using the LETI method by RASTEGAEV, V. P, AVROV, D. D, RESHANOV, S. A, LEBEDEV, A. O

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Recombinant Cells as a Tool for Evaluating the Specific Activity of Radiolabeled Antibodies against Endoglin (CD105) by Shashkova, O. A., Smirnov, I. V., Pinevich, A. A., Avrov, K. O., Terekhina, L. A., Malakhov, I. S., Stolbovaya, A. Yu, Gryazeva, I. V., Vartanyan, N. L., Krutetskaya, I. Yu, Antuganov, D. O., Shatik, S. V., Samoilovich, M. P.

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