Application of Polycrystalline SiGe for Gain Control in SiGe Heterojunction Bipolar Transistors by Kunz, V.D., de Groot, C.H., Hall, S., Anteney, I.M., Abdul-Rahim, A.I., Ashburn, P.

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Scalable MIM capacitor polynomial equation model development with application in the design of 2.4GHz PHEMT low noise amplifier by Sanusi, R., Norhapizin, K., Enche Ab Rahim, S.A., Abdul Rahim, A.I., Marzuki, A., Yahya, M.R.

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Characterization of on-wafer RF passive components for RFIC devices using three-steps de-embedding method by Siti, Maisurah M.H., Mohd, Nizam O., Marzuki, A., Rahim, A.I. Abdul, Mohamed, Razman Y

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Design of 900MHz voltage-controlled oscillator using 0.18μm CMOS technology by Siti Maisurah, M.H., Marzuki, A., Mohd Azmi, I., Abdul Rahim, A.I., Mohamed Razman, Y.

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Low temperature in-situ phosphorus doped single-crystal silicon emitters for application in SiGe HBTs by Abdul-Rahim, A.I., Marsh, C.D., Ashburn, P., Booker, G.

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A 0.18μm CMOS T/R switch for 900MHz wireless application by Siti Maisurah, M.H., Mohd Azmi, I., Rasidah, S., Abdul Rahim, A.I., Mohamed Razman, Y.

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Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters by Abdul-Rahim, A.I., Marsh, C.D., Nash, G.R., Mitchell, M., Booker, G.R., Ashburn, P.

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Influence of gate width and gate finger towards noise figure of p-HEMT by Osman, M.N., Abdul Rahim, A.I., Yahya, M.R., Awang Mat, A.F.

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Improved control of polysilicon emitter interfacial oxide using a UHV-compatible LPCVD cluster tool by Abdul-Rahim, A.I., Marsh, C.D., Ashburn, P., Bookers, G.R.

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