Defect Engineering for Enhanced Silicon Radiofrequency Substrates by Perrosé, Martin, Baron, Yoann, Lefaucher, Baptiste, Acosta Alba, Pablo, Raskin, Jean‐Pierre

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Solid phase recrystallization induced by multi-pulse nanosecond laser annealing by Acosta Alba, Pablo, Aubin, Joris, Perrot, Sylvain, Mazzamuto, Fulvio, Grenier, Adeline, Kerdilès, Sébastien

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Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing by Tabata, Toshiyuki, Roze, Fabien, Acosta Alba, Pablo, Halty, Sebastien, Raynal, Pierre-Edouard, Karmous, Imen, Kerdiles, Sebastien, Mazzamuto, Fulvio

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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1− xGex and Si layers by Daubriac, Richard, Scheid, Emmanuel, Rizk Hiba, Monflier, Richard, Joblot Sylvain, Beneyton Rémi, Acosta, Alba Pablo, Kerdilès Sébastien, Filadelfo, Cristiano

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Multiscale modeling of ultrafast melting phenomena by Calogero, Gaetano, Raciti, Domenica, Acosta-Alba, Pablo, Cristiano, Fuccio, Deretzis, Ioannis, Fisicaro, Giuseppe, Huet, Karim, Kerdilès, Sébastien, Sciuto, Alberto, La Magna, Antonino

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Wrinkles Emerging in SiO2/Si Stack during UV Nanosecond Laser Anneal by Karmous, Imen, Roze, Fabien, Raynal, Pierre-Edouard, Huet, Karim, Acosta Alba, Pablo, Tabata, Toshiyuki, Kerdiles, Sebastien

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Surface self-diffusion of silicon during high temperature annealing by Acosta-Alba, Pablo E., Kononchuk, Oleg, Gourdel, Christophe, Claverie, Alain

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Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys by Quintero, Andrea, Alba, Pablo Acosta, Hartmann, Jean-Michel, Cooper, David, Gergaud, Patrice, Reboud, Vincent, Rodriguez, Philippe

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Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing by Chery, N., Zhang, M., Monflier, R., Mallet, N., Seine, G., Paillard, V., Poumirol, J. M., Larrieu, G., Royet, A. S., Kerdilès, S., Acosta-Alba, P., Perego, M., Bonafos, C., Cristiano, F.

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Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities by Monflier, R., Tabata, T., Rizk, H., Roul, J., Huet, K., Mazzamuto, F., Acosta Alba, P., Kerdilès, S., Boninelli, S., La Magna, A., Scheid, E., Cristiano, F., Bedel-Pereira, E.

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Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing by Tabata, Toshiyuki, Rozé, Fabien, Pablo Acosta Alba, Halty, Sebastien, Pierre-Edouard Raynal, Karmous, Imen, Kerdilés, Sébastien, Mazzamuto, Fulvio

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Atomistic Insights into Ultrafast SiGe Nanoprocessing by Calogero, Gaetano, Raciti, Domenica, Ricciarelli, Damiano, Acosta-Alba, Pablo, Cristiano, Fuccio, Daubriac, Richard, Demoulin, Remi, Deretzis, Ioannis, Fisicaro, Giuseppe, Hartmann, Jean-Michel, Kerdilès, Sébastien, La Magna, Antonino

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Microsecond non-melt UV laser annealing for future 3D-stacked CMOS by Tabata, Toshiyuki, Rozé, Fabien, Thuries, Louis, Halty, Sebastien, Pierre-Edouard Raynal, Huet, Karim, Mazzamuto, Fulvio, Joshi, Abhijeet, Basol, Bulent M, Pablo Acosta Alba, Kerdilès, Sébastien

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Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing by Dagault, Lea, Acosta-Alba, Pablo, Kerdilès, Sébastien, Barnes, Jean-Paul, Hartmann, Jean-Michel, Gergaud, Patrice, Nguyen, Than Tra, Grenier, Adeline, Aubin, Joris, Cristiano, Fuccio

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Nanosecond Laser Annealing of In-Situ Boron-Doped Ge Layers for Dopant Activation by Frauenrath, Marvin, Acosta Alba, Pablo, Papon, Anne-Marie, Hartmann, Jean-Michel

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(Invited) Sequential 3D Process Integration: Opportunities for Low Temperature Processing by Kerdilès, Sébastien, Acosta-Alba, Pablo, Mathieu, Benoit, Veillerot, Marc, Denis, Hervé, Aussenac, François, Mazzamuto, Fulvio, Toque-Tresonne, Inès, Huet, Karim, Samson, Marie-Pierre, Previtali, Bernard, Brunet, Laurent, Batude, Perrine, Fenouillet-Beranger, Claire

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Wrinkles Emerging in SiO 2 /Si Stack during UV Nanosecond Laser Anneal by Karmous, Imen, Roze, Fabien, Raynal, Pierre-Edouard, Huet, Karim, Acosta Alba, Pablo, Tabata, Toshiyuki, Kerdiles, Sebastien

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Nanosecond Laser Irradiation for Interface Bonding Characterization by Larrey, Vincent, Arribehaute, Arthur, Caulfield, Brendon, Acosta Alba, Pablo, Morales, Christophe, Noël, Paul, Opprecht, Mathieu, Fournel, Frank, Landru, Didier, Rieutord, Francois

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Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys by Ricciarelli, Damiano, Mannino, Giovanni, Deretzis, Ioannis, Calogero, Gaetano, Fisicaro, Giuseppe, Daubriac, Richard, Cristiano, Fuccio, Demoulin, Remi, Michałowski, Paweł P., Acosta-Alba, Pablo, Hartmann, Jean-Michel, Kerdilès, Sébastien, La Magna, Antonino

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SiGe-enhanced Si capacitive modulator integration in a 300 mm silicon photonics platform for low power consumption by Douix, Maurin, Perez-Galacho, Diego, Charlet, Ismael, Baudot, Charles, Acosta-Alba, Pablo, Kerdilès, Sébastien, Euvrard, Catherine, Grosse, Philippe, Planchot, Jonathan, Blanc, Romuald, Beneyton, Rémi, Gourhant, Olivier, Crémer, Sébastien, Souhaité, Aurélie, Vulliet, Nathalie, Vivien, Laurent, Marris-Morini, Delphine, Boeuf, Frédéric

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