Search Results - Afanas'ev, Valery V.

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  1. 1
    Band alignment at interfaces of two-dimensional materials: internal photoemission analysis

    Band alignment at interfaces of two-dimensional materials: internal photoemission analysis by Afanas'ev, Valery V, Delie, Gilles, Houssa, Michel, Shlyakhov, Ilya, Stesmans, Andre, Trepalin, Vadim

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  2. 2
    Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxide

    Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxide by El-Sayed, Al-Moatasem, Watkins, Matthew B, Grasser, Tibor, Afanas'ev, Valery V, Shluger, Alexander L

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  3. 3
    Theoretical models of hydrogen-induced defects in amorphous silicon dioxide

    Theoretical models of hydrogen-induced defects in amorphous silicon dioxide by El-Sayed, Al-Moatasem, Wimmer, Yannick, Goes, Wolfgang, Grasser, Tibor, Afanas'ev, Valery V., Shluger, Alexander L.

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  4. 4
    Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

    Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 by Scalise, Emilio, Houssa, Michel, Pourtois, Geoffrey, Afanas’ev, Valery, Stesmans, André

    Published in Nano research
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  5. 5
    Nitrogen acceptor in 2H-polytype synthetic MoS2 assessed by multifrequency electron spin resonance

    Nitrogen acceptor in 2H-polytype synthetic MoS2 assessed by multifrequency electron spin resonance by Schoenaers, Ben, Stesmans, Andre, Afanas’ev, Valery V.

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  6. 6
    Deep electron and hole polarons and bipolarons in amorphous oxide

    Deep electron and hole polarons and bipolarons in amorphous oxide by Kaviani, Moloud, Strand, Jack, Afanas'ev, Valery V., Shluger, Alexander L.

    Published in Physical review. B
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  7. 7
    (Invited) Internal Photoemission of Electrons from 2-Dimensional Semiconductors

    (Invited) Internal Photoemission of Electrons from 2-Dimensional Semiconductors by Afanas'ev, Valery V., Chiappe, Daniele, Leonhardt, Alessandra, Houssa, Michel, Huyghebaert, Cedric, Radu, Iuliana, Stesmans, Andre

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  8. 8
    (Invited) Stoner Ferromagnetism in Two-Dimensional Materials

    (Invited) Stoner Ferromagnetism in Two-Dimensional Materials by Houssa, Michel, Meng, Ruishen, Iordanidou, Konstantina, Pourtois, Geoffrey, Afanas'ev, Valery V., Stesmans, Andre

    Published in ECS transactions
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  9. 9
    Hole-Doping Induced Ferromagnetism in Monolayer SnO: A First-Principles Study

    Hole-Doping Induced Ferromagnetism in Monolayer SnO: A First-Principles Study by Houssa, Michel, Iordanidou, Konstantina, Pourtois, Geoffrey, Afanas'ev, Valery V, Stesmans, Andre

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  10. 10
    Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors

    Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors by Pensl, Gerhard, Beljakowa, Svetlana, Frank, Thomas, Gao, Kunyuan, Speck, Florian, Seyller, Thomas, Ley, Lothar, Ciobanu, Florin, Afanas'ev, Valery, Stesmans, Andre, Kimoto, Tsunenobu, Schöner, Adolf

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  11. 11
    Nature of intrinsic and extrinsic electron trapping in SiO 2

    Nature of intrinsic and extrinsic electron trapping in SiO 2 by El-Sayed, Al-Moatasem, Watkins, Matthew B., Afanas'ev, Valery V., Shluger, Alexander L.

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  12. 12
    (Invited) Nature of Point Defects at High-Mobility Semiconductor/Interfaces Probed by Electron Spin Resonance: Thermal GaAs/GaAs-Oxide Structures

    (Invited) Nature of Point Defects at High-Mobility Semiconductor/Interfaces Probed by Electron Spin Resonance: Thermal GaAs/GaAs-Oxide Structures by Stesmans, Andre, Nguyen, Sang, Afanas'ev, Valery V

    Published in ECS transactions
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  13. 13
    (Invited) Electron Band Alignment at Ge/Oxide and A III -B V /Oxide Interfaces from Internal Photoemission Experiments

    (Invited) Electron Band Alignment at Ge/Oxide and A III -B V /Oxide Interfaces from Internal Photoemission Experiments by Afanas'ev, Valery V., Chou, Hsing- Yi, Houssa, Michel, Stesmans, Andre

    Published in ECS transactions
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  14. 14
    (Invited) Spectroscopy of Deep Gap States in High-k Insulators

    (Invited) Spectroscopy of Deep Gap States in High-k Insulators by Afanas'ev, Valery V, Wang, Wan Chih, Cerbu, Florin, Madia, Oreste, Houssa, Michel, Stesmans, Andre

    Published in ECS transactions
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  15. 15
    Chemical kinetics of the hydrogen-GePb1 defect interaction at the (100)GexSi1−x/SiO2 interface

    Chemical kinetics of the hydrogen-GePb1 defect interaction at the (100)GexSi1−x/SiO2 interface by Thoan, Nguyen Hoang, Stesmans, Andre, Nguyen, Anh Phuc Duc, Keunen, Koen, Afanas'ev, Valery V.

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  16. 16
    Hydrogen-Induced Rupture of Strained Si─O Bonds in Amorphous Silicon Dioxide

    Hydrogen-Induced Rupture of Strained Si─O Bonds in Amorphous Silicon Dioxide by El-Sayed, Al-Moatasem, Watkins, Matthew B., Grasser, Tibor, Afanas’ev, Valery V., Shluger, Alexander L.

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  17. 17
    Study of leakage mechanism and trap density in porous low-k materials

    Study of leakage mechanism and trap density in porous low-k materials by Gischia, G G, Croes, K, Groeseneken, G, Tokei, Z, Afanas'ev, V, Zhao, L

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  18. 18
    Interaction of Germanene with (0001)ZnSe Surfaces: A Theoretical Study

    Interaction of Germanene with (0001)ZnSe Surfaces: A Theoretical Study by Houssa, Michel, Scalise, Emilio, van den Broek, Bas, Pourtois, Geoffrey, Afanas'ev, Valery V., Stesmans, Andre

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  19. 19
    (Invited) Optimization of WAl 2 O 3 Cu(-Te) Material Stack for High-Performance Conductive-Bridging Memory Cells

    (Invited) Optimization of WAl 2 O 3 Cu(-Te) Material Stack for High-Performance Conductive-Bridging Memory Cells by Goux, Ludovic, Kim, Woosik, Opsomer, Karl, Belmonte, Attilio, Kar, G. S., De Stefano, F., Afanas'ev, Valery V., Celano, U., Houssa, Michel, Devulder, W., Detavernier, C., Muller, R., Vandervorst, W., Jurczak, Malgorzata

    Published in ECS transactions
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  20. 20
    Nature of intrinsic and extrinsic electron trapping in SiO sub(2)

    Nature of intrinsic and extrinsic electron trapping in SiO sub(2) by El-Sayed, Al-Moatasem, Watkins, Matthew B, Afanas'ev, Valery V, Shluger, Alexander L

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