Search Results - Agopian, P.G.D.

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  1. 1
    Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications

    Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications by Silva, V.C.P., Martino, J.A., Simoen, E., Veloso, A., Agopian, P.G.D.

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  2. 2
    Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C

    Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C by Agopian, P.G.D., Carmo, G.J., Martino, J.A., Simoen, E., Peralagu, U., Parvais, B., Waldron, N., Collaert, N.

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  3. 3
    Experimental analysis and improvement of the DC method for self-heating estimation

    Experimental analysis and improvement of the DC method for self-heating estimation by Mori, C.A.B., Agopian, P.G.D., Martino, J.A.

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  4. 4
    Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs

    Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs by Bühler, R.T., Agopian, P.G.D., Collaert, N., Simoen, E., Claeys, C., Martino, J.A.

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  5. 5
    Transconductance ramp effect in high-k triple gate sSOI nFinFETs

    Transconductance ramp effect in high-k triple gate sSOI nFinFETs by Martino, J.A., Agopian, P.G.D., Collaert, N., Simoen, E., Claeys, C.

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