Structural and mechanical properties of amorphous silicon carbonitride films prepared by vapor-transport chemical vapor deposition by Awad, Y., El Khakani, M.A., Aktik, C., Mouine, J., Camiré, N., Lessard, M., Scarlete, M., Al-Abadleh, H.A., Smirani, R.

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Effect of thermal annealing on the structural and mechanical properties of amorphous silicon carbide films prepared by polymer-source chemical vapor deposition by Awad, Y., El Khakani, M.A., Brassard, D., Smirani, R., Camiré, N., Lessard, M., Aktik, C., Scarlete, M., Mouine, J.

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Electrical characterization of amorphous silicon carbide thin films deposited via polymeric source chemical vapor deposition by Fanaei, T., Camiré, N., Aktik, C., Gujrathi, S., Lessard, M., Awad, Y., Oulachgar, E., Scarlete, M.

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Chemical and Structural Characterization of SiONC Dielectric Thin Film Deposited by PSCVD by Oulachgar, E. H., Aktik, C., Dostie, S., Sowerby, R., Gujrathi, S., Scarlete, M.

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Thermally induced interfacial interactions between various metal substrates and a-SiC thin films deposited by a polymer-source chemical vapor deposition by Awad, Y., El Khakani, M.A., Aktik, C., Mouine, J., Camiré, N., Lessard, M., Scarlete, M.

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Structural analysis of silicon carbon nitride films prepared by vapor transport-chemical vapor deposition by Awad, Y., El Khakani, M. A., Scarlete, M., Aktik, C., Smirani, R., Camiré, N., Lessard, M., Mouine, J.

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Fabrication of (NH4)2S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition by Jaouad, A., Aimez, V., Aktik, Ç., Bellatreche, K., Souifi, A.

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Passivation of GaAs metal–insulator–semiconductor structures by (NH4)2Sx and by evaporation of SiO2 by Jaouad, A., Aktik, Ç.

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Formation of EL2, AsGa and U band in irradiated GaAs: Effects of annealing by Jorio, A., Carlone, C., Parenteau, M., Aktik, C., Rowell, N. L.

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Photoluminescence study of gallium arsenide irradiated with 15 MeV alpha particles by Sellami, L., Aubin, M., Aktik, C., Carlone, C., Houdayer, A., Hinrichsen, P.

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Interface state buildup by high-field stressing in various metal-oxide-semiconductor insulators using deep level transient spectroscopy by Belkouch, S., Jean, C., Aktik, C., Ameziane, E. L.

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Passivation of GaAs metal-insulator-semiconductor structures by (NH sub(4)) sub(2 )S sub(x) and by evaporation of SiO sub(2) by Jaouad, A, Aktik, C

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Interface states distribution in electrical stressed oxynitrided gate-oxide by BELKOUCH, S, NGUYEN, T. K, LANDSBERGER, L. M, AKTIK, C, JEAN, C, KAHRIZI, M

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Passivation of GaAs using P2S5/(NH4)2S+Se and (NH4)2S+Se by Fanaei S., T., Aktik, C.

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Passivation of GaAs using P 2 S 5 /( NH 4 ) 2 S + Se and ( NH 4 ) 2 S + Se by Fanaei S., T., Aktik, C.

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The photoconductivity spectrum of electron and neutron irradiated n lightly doped GaAs by Khanna, S.M., Carlone, C., Halle, S., Parenteau, M., Beliveau, A., Aktik, C., Gerdes, J.W.

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A simple velocity model for low-pressure metalorganic chemical vapor deposition by Aktik, Cetin, Belkouch, Said

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Se chemical passivation and annealing treatment for GaAs Schottky diode by Xu, Huaiqi, Belkouch, Saïd, Aktik, Cetin, Rasmussen, Wolfgang

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A novel doping procedure for a-Si:H by Aktik, C, Aktik, M, Bruyere, J.-C, Currie, J.F, Poulin, S, Yelon, A, Brebner, J.L, Cochrane, R.W, Groleau, R, Lu, H

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Passivation of GaAs metal–insulator–semiconductor structures by ( NH 4 ) 2 S x and by evaporation of SiO 2 by Jaouad, A., Aktik, Ç.

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