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Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition
by
Rahman, Mohd Nazri Abd
,
Sulaiman, Abdullah Fadil
,
Khudus, Muhammad I. M. Abdul
,
Allif, Kamarul
,
Talik, Noor Azrina
,
Basri, Siti Hajar
,
Shuhaimi, Ahmad
Published in
Japanese Journal of Applied Physics
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Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD
by
Abd Rahman, Mohd Nazri
,
Talik, Noor Azrina
,
Abdul Khudus, Muhammad I. M.
,
Sulaiman, Abdullah Fadil
,
Allif, Kamarul
,
Zahir, Norhilmi Mohd
,
Shuhaimi, Ahmad
Published in
CrystEngComm
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Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
by
Mahat, Mohamad Raqif
,
Talik, Noor Azrina
,
Abd Rahman, Mohd Nazri
,
Anuar, Mohd Afiq
,
Allif, Kamarul
,
Azman, Adreen
,
Nakajima, Hideki
,
Shuhaimi, Ahmad
,
Abd Majid, Wan Haliza
Published in
Materials science in semiconductor processing
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Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates MOCVD
by
Abd Rahman, Mohd Nazri
,
Talik, Noor Azrina
,
Abdul Khudus, Muhammad I. M
,
Sulaiman, Abdullah Fadil
,
Allif, Kamarul
,
Zahir, Norhilmi Mohd
,
Shuhaimi, Ahmad
Published in
CrystEngComm
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Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD
by
Sivanathan, P.C.
,
Shuhaimi, Ahmad
,
Hamza, Hebal
,
Kowsz, Stacy J.
,
Abdul Khudus, Muhammad I.M.
,
Li, Hongjian
,
Allif, Kamarul
Published in
Superlattices and microstructures
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