Search Results - Allums, K.K.

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  1. 1
    Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

    Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes by Khanna, Rohit, Allums, K.K., Abernathy, C.R., Pearton, S.J., Kim, Jihyun, Ren, F., Dwivedi, R., Fogarty, T.N., Wilkins, R., Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, Center for Applied Radiation Research, Prairie View A and M University, Prairie View, Texas 77446

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  2. 2
    Novel dielectrics for gate oxides and surface passivation on GaN

    Novel dielectrics for gate oxides and surface passivation on GaN by Gila, B.P., Thaler, G.T., Onstine, A.H., Hlad, M., Gerger, A., Herrero, A., Allums, K.K., Stodilka, D., Jang, S., Kang, B., Anderson, T., Abernathy, C.R., Ren, F., Pearton, S.J.

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  3. 3
    Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes

    Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes by Allums, K.K., Hlad, M., Gerger, A.P., Gila, B.P., Abernathy, C.R., Pearton, S.J., Ren, F., Dwivedi, R., Fogarty, T.N., Wilkins, R.

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  4. 4
    High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

    High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors by Luo, B., Johnson, J. W., Ren, F., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., Wilkins, R., Dabiran, A. M., Wowchack, A. M., Polley, C. J., Chow, P. P., Baca, A. G.

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  5. 5
    Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors

    Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors by Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., Shul, R.J.

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  6. 6
    Proton irradiation of MgO- or Sc 2O 3 passivated AlGaN/GaN high electron mobility transistors

    Proton irradiation of MgO- or Sc 2O 3 passivated AlGaN/GaN high electron mobility transistors by Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., Shul, R.J.

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  7. 7
    New Dielectrics for Gate Oxides and Surface Passivation on GaN

    New Dielectrics for Gate Oxides and Surface Passivation on GaN by Gila, B.P., Thaler, G.T., Onstine, A.H., Hlad, M., Gerger, A., Herrero, A., Allums, K.K., Stodilka, D., Jang, S., Kang, B., Anderson, T., Abernathy, C.R., Ren, F., Pearton, S.J.

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