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Simulation of graphitic contacts to p‐type Si using a metal‐resistor‐semiconductor (M‐R‐S) model implemented in TCAD
by
Alnassar, M.S.N.
,
Luong, S.
,
Tran, H.N.
,
Partridge, J.G.
,
Holland, A.S.
Published in
International journal of numerical modelling
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International Journal Of Numerical Modelling
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