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Search Results - Alrebati, A. M.
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Conduction mechanism and dielectric properties of a Se80Ge20−x Cd x (x = 0, 6 and 12 at.wt%) films
by
Shakra, A. M.
,
Farid, A. S.
,
Hegab, N. A.
,
Afifi, M. A.
,
Alrebati, A. M.
Published in
Applied physics. A, Materials science & processing
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Conduction mechanism and dielectric properties of a Se80Ge20−xCdx (x = 0, 6 and 12 at.wt%) films
by
Shakra, A. M.
,
Farid, A. S.
,
Hegab, N. A.
,
Afifi, M. A.
,
Alrebati, A. M.
Published in
Applied physics. A, Materials science & processing
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Compositional Dependence of the Optical Properties of Amorphous Semiconducting Glass Se80Ge20−xCdx (0 ≤ x ≤ 12 at.%) Thin Films
by
Hegab, N. A.
,
Farid, A. S.
,
Shakra, A. M.
,
Afifi, M. A.
,
Alrebati, A. M.
Published in
Journal of electronic materials
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Conduction mechanism and dielectric properties of a Se sub(80)Ge sub(20-x)
by
Shakra, A M
,
Farid, A S
,
Hegab, NA
,
Afifi, MA
,
Alrebati, A M
Published in
Applied physics. A, Materials science & processing
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Compositional Dependence of the Optical Properties of Amorphous Semiconducting Glass Se80Ge20−x Cd x (0 ≤ x ≤ 12 at.%) Thin Films
by
Hegab, N. A.
,
Farid, A. S.
,
Shakra, A. M.
,
Afifi, M. A.
,
Alrebati, A. M.
Published in
Journal of electronic materials
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Compositional Dependence of the Optical Properties of Amorphous Semiconducting Glass Se^sub 80^Ge^sub 20-x^Cd^sub x^ (0 [less than or equal to] x [less than or equal to] 12 at.%) T...
by
Hegab, N A
,
Farid, A S
,
Shakra, A M
,
Afifi, M A
,
Alrebati, A M
Published in
Journal of electronic materials
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Electrical and Switching Phenomenon of Se80Ge20−xCdx (0 ≤ x ≤ 12 at.%) Amorphous System
by
Afifi, M.A.
,
Hegab, N.A.
,
Shakra, A.M.
,
Farid, A.S.
,
Alrebati, A.M.
Published in
Journal of electronic materials
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