Search Results - Alyabina, N.A.

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    Epitaxial n+-Ge/p+-Si(001) heterostructures with ultra sharp doping profiles for light emitting diode applications

    Epitaxial n+-Ge/p+-Si(001) heterostructures with ultra sharp doping profiles for light emitting diode applications by Titova, A.M., Shengurov, V.G., Filatov, D.O., Denisov, S.A., Chalkov, V.Yu, Ved', M.V., Zaitzev, A.V., Sushkov, A.A., Alyabina, N.A.

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  2. 2
    Gallium-doped germanium epitaxial layers grown on silicon substrates by hot wire chemical vapor deposition

    Gallium-doped germanium epitaxial layers grown on silicon substrates by hot wire chemical vapor deposition by Shengurov, V.G., Denisov, S.A., Yu. Chalkov, V., Filatov, D.O., Kudrin, A.V., Sychyov, S.M., Trushin, V.N., Zaitsev, A.V., Titova, A.M., Alyabina, N.A.

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  3. 3
    Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique

    Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique by Shengurov, V. G., Chalkov, V. Yu, Denisov, S. A., Alyabina, N. A., Guseinov, D. V., Trushin, V. N., Gorshkov, A. P., Volkova, N. S., Ivanova, M. M., Kruglov, A. V., Filatov, D. O.

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  4. 4
    Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

    Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level by Orlov, L.K., nikova, A.A.Mel’, Orlov, M.L., Alyabina, N.A., Ivina, N.L., Neverov, V.N., Horváth, Zs.J.

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  5. 5
    Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers

    Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers by Ivina, N.L., Orlov, L.K., Shevtsov, V.B., Alyabina, N.A.

    Published in Microelectronics
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