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    Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride

    Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride by Leguijt, C., Lölgen, P., Eikelboom, J.A., Amesz, P.H., Steeman, R.A., Sinke, W.C., Sarro, P.M., Verhoef, L.A., Michiels, P.-P., Chen, Z.H., Rohatgi, A.

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