Search Results - Angen Franklin, S.

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  1. 1
    Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage

    Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage by Michel, Ancy, I. V., Binola K. Jebalin, Franklin, S. Angen, Juliet Rani, Sylvia, A., Angelin Delighta, Nirmal, D.

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  2. 2
    A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications

    A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications by A, Angelin Delighta, I.V, Binola K Jebalin, Ajayan, J., Franklin, S. Angen, Nirmal, D.

    Published in SILICON
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  3. 3
    Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

    Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems by Angen Franklin, S., I. V, Binola K Jebalin, Chander, Subhash, Kumar, Raj, Ajayan, J., Nirmal, D.

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  4. 4
    253 GHz f T Graded‐Channel AlGaN/GaN High‐Electron‐Mobility Transistors with New Cliff Barrier for Millimeter Wave High‐Frequency Applications

    253 GHz f T Graded‐Channel AlGaN/GaN High‐Electron‐Mobility Transistors with New Cliff Barrier for Millimeter Wave High‐Frequency Applications by Angen Franklin, S., I. V., Binola K. Jebalin, Chander, Subhash, Juliet Rani, Sylvia, Nirmal, D.

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  5. 5
    Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs

    Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs by Franklin, S. Angen, V, Binola K Jebalin I., Chander, Subhash, Nirmal, D.

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  6. 6
    4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars

    4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars by Fletcher, A. S. Augustine, Franklin, S. Angen, Murugapandiyan, P., Ajayan, J., Nirmal, D.

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  7. 7
    Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone

    Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone by Jebalin, I.V.Binola K, Franklin, S. Angen, G, Gifta, P, Prajoon, Nirmal, D.

    Published in Microelectronics
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  8. 8
    Analytical Modelling and Simulation of Graphene Based Biosensor to Detect SARS-COV-2 from Aerosal Particles

    Analytical Modelling and Simulation of Graphene Based Biosensor to Detect SARS-COV-2 from Aerosal Particles by Gifta, G., Jebalin, I. V.Binola K., Franklin, S. Angen, Rani, D. Gracia Nirmala, Nirmal, D.

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