Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBTs by Anteney, I.M., Lippert, G., Ashburn, P., Osten, H.J., Heinemann, B., Parker, G.J., Knoll, D.

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Application of Polycrystalline SiGe for Gain Control in SiGe Heterojunction Bipolar Transistors by Kunz, V.D., de Groot, C.H., Hall, S., Anteney, I.M., Abdul-Rahim, A.I., Ashburn, P.

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Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe:C HBTs by Anteney, I.M., Ashburn, P., Parker, G.J., Lippert, G., Osten, H.J.

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Direct Extraction of Intrinsic Excess Phase Shift Time Constants in SiGe HBTs by Hamel, J.S., Leach, G.R., Anteney, I.M.

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Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors by Anteney, I.M., Lippert, G., Ashburn, P., Osten, H.J., Heinemann, B., Parker, G.J.

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