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Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates
by
Zhi-Yuan Cheng
,
Currie, M.T.
,
Leitz, C.W.
,
Taraschi, G.
,
Fitzgerald, E.A.
,
Hoyt, J.L.
,
Antoniadas, D.A.
Published in
IEEE electron device letters
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