Search Results - Aoshima, Keito

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  1. 1
    Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation

    Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation by Aoshima, Keito, Horita, Masahiro, Suda, Jun

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  2. 2
    Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy

    Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy by Aoshima, Keito, Horita, Masahiro, Suda, Jun

    Published in AIP advances
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  3. 3
    Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN and their annealing behavior

    Electron traps formed by gamma-ray irradiation in homoepitaxial n-type GaN and their annealing behavior by Aoshima, Keito, Kanegae, Kazutaka, Horita, Masahiro, Suda, Jun

    Published in AIP advances
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  4. 4
    Correlation between non-ionizing energy loss and production rate of electron trap at E C − (0.12–0.20) eV formed in gallium nitride by various types of radiation

    Correlation between non-ionizing energy loss and production rate of electron trap at E C − (0.12–0.20) eV formed in gallium nitride by various types of radiation by Aoshima, Keito, Horita, Masahiro, Suda, Jun

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  5. 5
    SiO2/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition

    SiO2/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition by Aoshima, Keito, Taoka, Noriyuki, Horita, Masahiro, Suda, Jun

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  6. 6
    SiO 2 /GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition

    SiO 2 /GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition by Aoshima, Keito, Taoka, Noriyuki, Horita, Masahiro, Suda, Jun

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  7. 7
    Impact of gamma-ray irradiation on capacitance-voltage characteristics of Al2O3/GaN MOS diodes with and without post-metallization annealing

    Impact of gamma-ray irradiation on capacitance-voltage characteristics of Al2O3/GaN MOS diodes with and without post-metallization annealing by Aoshima, Keito, Horita, Masahiro, Suda, Jun, Hashizume, Tamotsu

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  8. 8
    Impact of gamma-ray irradiation on capacitance–voltage characteristics of Al 2 O 3 /GaN MOS diodes with and without post-metallization annealing

    Impact of gamma-ray irradiation on capacitance–voltage characteristics of Al 2 O 3 /GaN MOS diodes with and without post-metallization annealing by Aoshima, Keito, Horita, Masahiro, Suda, Jun, Hashizume, Tamotsu

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  9. 9
    Geologic evidence for coseismic uplift at ~ AD 400 in coastal lowland deposits on the Shimizu Plain, central Japan

    Geologic evidence for coseismic uplift at ~ AD 400 in coastal lowland deposits on the Shimizu Plain, central Japan by Kitamura, Akihisa, Ina, Tomoya, Suzuki, Daisuke, Tsutahara, Keito, Sugawara, Daisuke, Yamada, Kazuyoshi, Aoshima, Akira

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