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Search Results - Arimura, Tadanobu
Search Results - Arimura, Tadanobu
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Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing
by
Okumura, Hironori
,
Watanabe, Yasuhiro
,
Shibata, Tomohiko
,
Yoshizawa, Kohei
,
Uedono, Akira
,
Tokunaga, Hiroki
,
Koseki, Shuuichi
,
Arimura, Tadanobu
,
Suihkonen, Sami
,
Palacios, Tomás
Published in
Japanese Journal of Applied Physics
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Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices
by
Matsumoto, Koh
,
Yamaoka, Yuya
,
Ubukata, Akinori
,
Arimura, Tadanobu
,
Piao, Guanxi
,
Yano, Yoshiki
,
Tokunaga, Hiroki
,
Tabuchi, Toshiya
Published in
Japanese Journal of Applied Physics
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Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmospheric pressure growth
by
Matsumoto, Koh
,
Ikenaga, Kazutada
,
Yamamoto, Jun
,
Naito, Kazuki
,
Yano, Yoshiki
,
Ubukata, Akinori
,
Tokunaga, Hiroki
,
Arimura, Tadanobu
,
Cho, Katsuaki
,
Tabuchi, Toshiya
,
Yamaguchi, Akira
,
Harada, Yasuhiro
,
Ban, Yuzaburo
,
Uchiyama, Kousuke
Published in
Journal of semiconductors
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Japanese Journal Of Applied Physics
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Journal Of Semiconductors
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Physical Sciences
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Physics
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Science & Technology
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Physics, Applied
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Aln
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Aluminum Nitride
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Annealing
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Atmospheric Pressure
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Atmospheric Pressure Growth
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Barometric Pressure
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Criteria
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Crystal Defects
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Crystal Growth
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Crystals
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Defect Annealing
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Diffusion Layers
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Donor
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Electrical Property
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Gallium Nitrides
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Gan: Algan
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Iopscience Journals
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Institute Of Physics
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