Surface morphology of Si layers grown on SiO2 by Shklyaev, A.A., Kozhukhov, A.S., Armbrister, V.A., Gulyaev, D.V.

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Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior by Dabard, C., Shklyaev, A.A., Armbrister, V.A., Aseev, A.L.

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Nucleation and growth of ordered groups of SiGe quantum dots by Zinovyev, V. A., Dvurechenskii, A. V., Kuchinskaya, P. A., Armbrister, V. A., Teys, S. A., Shklyaev, A. A., Mudryi, A. V.

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Resonant photoluminescence of Si layers grown on SiO2 by Shklyaev, A.A., Gulyaev, D.V., Zhuravlev, K.S., Latyshev, A.V., Armbrister, V.A., Dvurechenskii, A.V.

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Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation by Smagina, Zh.V., Novikov, P.L., Zinovyev, V.A., Armbrister, V.A., Teys, S.A., Dvurechenskii, A.V.

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Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation by Smagina, J.V., Novikov, P.L., Armbrister, V.A., Zinoviev, V.A., Nenashev, A.V., Dvurechenskii, A.V.

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Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO 2 for non-volatile memory device by Stepina, N.P., Dvurechenskii, A.V., Armbrister, V.A., Kirienko, V.V., Novikov, P.L., Kesler, V.G., Gutakovskii, A.K., Smagina, Z.V., Spesivtzev, E.V.

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Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device by Stepina, N.P., Dvurechenskii, A.V., Armbrister, V.A., Kirienko, V.V., Novikov, P.L., Kesler, V.G., Gutakovskii, A.K., Smagina, Z.V., Spesivtzev, E.V.

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Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy by Dvurechenskii, A.V., Smagina, J.V., Groetzschel, R., Zinovyev, V.A., Armbrister, V.A., Novikov, P.L., Teys, S.A., Gutakovskii, A.K.

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