Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures by Seredin, P.V., Goloshchapov, D.L., Zolotukhin, D.S., Lenshin, A.S., Mizerov, A.M., Arsent'ev, I.N., Leiste, H., Rinke, M.

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Structure and optical properties of thin [Al.sub.2][O.sub.3] films deposited by the reactive ion-plasma sputtering method on GaAs substrates by Seredin, P.V, Goloschapov, D.L, Lukin, A.N, Len'shin, A.S, Bondarev, A.D, Arsent'ev, I.N, Vavilova, L.S, Tarasov, I.S

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Photoluminescence properties of heavily doped heterostructures based on [.sub.1-y][Si.sub.y] solid solutions by Seredin, P.V, Domashevskaya, E.P, Ternovaya, V.E, Arsent'ev, I.N, Vinokurov, D.A, Tarasov, I.S, Prutskij, T

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X-ray diffraction studies of heterostructures based on solid solutions [Al.sub.x][Ga.sub.1-x][As.sub.y][P.sub.1-y]: Si by Seredin, P.V, Ternovaya, V.E, Glotov, A.V, Len'shin, A.S, Arsent'ev, I.N, Vinokurov, D.A, Tarasov, I.S, Leiste, H, Prutskij, T

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Semiconductor lasers with internal wavelength selection by Zolotarev, V. V., Leshko, A. Yu, Lyutetskii, A. V., Nikolaev, D. N., Pikhtin, N. A., Podoskin, A. A., Slipchenko, S. O., Sokolova, Z. N., Shamakhov, V. V., Arsent’ev, I. N., Vavilova, L. S., Bakhvalov, K. V., Tarasov, I. S.

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Beryllium diffusion and influence on the luminescent and electrical properties of indium phosphide by Agaev, V. V., Arsent’ev, I. N., Metreveli, S. G., Starosel’tseva, S. P., Yablochkina, G. I.

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