Search Results - Aydaraliev, M.

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  1. 1
    6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm

    6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm by Aydaraliev, M., Zotova, N. V., Karandashov, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Bewley, W. W., Lindle, J. R., Meyer, J. R.

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  2. 2
    Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys

    Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys by Aydaraliev, M, Zotova, N V, Karandashov, S A, Matveev, B A, Stus', N M, Talalakin, G N

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  3. 3
    High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm)

    High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm) by Aydaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.

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  4. 4
    Radiation recombination in InAsSb/InAsSbP double heterostructures

    Radiation recombination in InAsSb/InAsSbP double heterostructures by Aydaraliev, M, Bresler, M S, Gusev, O B, Karandashov, S A, Matveev, B A, Stus, M N, Talalakin, G N, Zotova, N V

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  5. 5
    InAs-based laser double heterostructures with p-n junction in the active region

    InAs-based laser double heterostructures with p-n junction in the active region by Bresler, M.S., Gusev, O.B., Zotova, N.V., Aydaraliev, M., Karandashev, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N.

    Published in Optical materials
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  6. 6
    Radiation recombination in InAsSb/InAsSbP double heterostructures

    Radiation recombination in InAsSb/InAsSbP double heterostructures by AYDARALIEV, M, BRESLER, M. S, GUSEV, O. B, KARANDASHOV, S. A, MATVEEV, B. A, STUS', M. N, TALALAKIN, G. N, ZOTOVA, N. V

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  7. 7
    Low-threshold long-wave lasers (λ=3.0-3.6 μm) based on III-V alloys

    Low-threshold long-wave lasers (λ=3.0-3.6 μm) based on III-V alloys by AYDARALIEV, M, ZOTOVA, N. V, KARANDASHOV, S. A, MATVEEV, B. A, STUS', N. M, TALALAKIN, G. N

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