Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures by Benbakhti, B., Ayubi-Moak, J.S., Kalna, K., Lin, D., Hellings, G., Brammertz, G., De Meyer, K., Thayne, I., Asenov, A.

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Towards the global modeling of InGaAs-based pseudomorphic HEMTs by Ayubi-Moak, J. S., Akis, R., Ferry, D. K., Goodnick, S. M., Faralli, N., Saraniti, M.

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Global modeling of carrier-field dynamics in semiconductors using EMC–FDTD by Willis, K. J., Ayubi-Moak, J. S., Hagness, S. C., Knezevic, I.

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Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors by Akis, R, Ayubi-Moak, J S, Ferry, D K, Goodnick, S M, Faralli, N, Saraniti, M

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Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7 As MOSFETs by Benbakhti, B, Ayubi-Moak, J S, Kalna, K, Asenov, A

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Global Modeling of high frequency devices by Ayubi-Moak, J. S., Goodnick, S. M., Saraniti, M.

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The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length by Akis, R., Ayubi-Moak, J.S., Faralli, N., Ferry, D.K., Goodnick, S.M., Saraniti, M.

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Simulation of Ultrasubmicrometer-Gate [Formula Omitted] Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator by Ayubi-Moak, J S, Ferry, D K, Goodnick, S M, Akis, R, Saraniti, M

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Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors : Heterostructure Terahertz Devices by AKIS, R, AYUBI-MOAK, J. S, FERRY, D. K, GOODNICK, S. M, FARALLI, N, SARANITI, M

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Coupling Maxwell's Equations to Full Band Particle-Based Simulators by Ayubi-Moak, J.S., Goodnick, S.M., Aboud, S.J., Saraniti, M., El-Ghazaly, S.

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Simulating Pseudomorphic HEMTs: Optimizing Performance to Achieve Multi-terahertz Operating Frequencies by Akis, R., Ayubi-Moak, J.S., Faralli, N., Goodnick, S.M., Ferry, D.K., Saraniti, M.

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The upper limits of cut-off frequency in ultra-short gate length InP-based p-HEMTs by Akis, R., Faralli, N., Ferry, D.K., Goodnick, S.M., Saraniti, M., Ayubi-Moak, J.S.

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Effect of interface state trap density on the performance of scaled surface channel In 0.3 Ga 0.7 As MOSFETs by Benbakhti, B, Ayubi-Moak, J S, Kalna, K, Asenov, A

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Global modeling of carrier-field dynamics in semiconductors using EMC―FDTD: Special Issue on the State of Computational Electronics in the U.S by WILLIS, K. J, AYUBI-MOAK, J. S, HAGNESS, S. C, KNEZEVIC, I

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Monte Carlo simulations of inverse channel versus implant free In0.3Ga0.7As MOSFETs by Kalna, K., Ayubi-Moak, J. S.

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Mixed-level simulation of opto-electronic devices by Bahl, M., Heller, E., Ayubi-Moak, J. S., Ng, W.-C, Scarmozzino, R., Letay, G., Schneider, L.

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III-V MOSFETs for Digital Applications with Silicon Co-Integration by Kalna, K., Asenov, A., Ayubi-Moak, J.S., Craven, A.J., Droopad, R., Hill, R., Holland, M.C., Li, X., Long, A.R., Longo, P., MacIntyre, D., Passlack, M., Paterson, G., Stanley, C.R., Thoms, S., Zhou, H., Thayne, I.G.

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Physical Modeling of Microwave Transistors Using a Full-Band/Full-Wave Simulation Approach by Ayubi-Moak, J. S., Akis, R., Saraniti, M., Ferry, D. K., Goodnick, S. M.

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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs by AYUBI-MOAK, J, BENBAKHTI, B, KALNA, K, PATERSON, G. W, HILL, R, PASSLACK, M, THAYNE, I, ASENOV, A

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Full-band CMC simulations of terahertz HEMTs by Ferry, D K, Ayubi-Moak, J, Akis, R, Faralli, N, Saraniti, M, Goodnick, S M

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