SVX4: a new deep-submicron readout IC for the Tevatron collider at Fermilab by Krieger, B., Alfonsi, S., Bacchetta, N., Centro, S., Christofek, L., Garcia-Sciveres, M., Haber, C., Hanagaki, K., Hoff, J., Johnson, M., von der Lippe, H., Lujan, P., Mandelli, E., Meng, G., Nomerotski, A., Pellet, D., Rapidis, P., Utes, M., Walder, J.-P., Weber, M., Wester, W., Wilkes, T., Yarema, R., Yao, W., Zimmerman, T.

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The CMS Beam Conditions and Radiation Monitoring System by Castro, E., Bacchetta, N., Bell, A.J., Dabrowski, A., Guthoff, M., Hall-Wilton, R., Hempel, M., Henschel, H., Lange, W., Lohmann, W., Müller, S., Novgorodova, O., Pfeiffer, D., Ryjov, V., Stickland, D., Schimdt, R., Walsh, R.

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Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS by Bacchetta, N., Bisello, D., Candelori, A., Rold, M.Da, Descovich, M., Kaminski, A., Messineo, A., Rizzo, F., Verzellesi, G.

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Low- and high-energy proton irradiations of standard and oxygenated silicon diodes by Candelori, A., Rando, R., Bisello, D., Bacchetta, N., Kaminski, A., Pantano, D., Stavitski, I., Wyss, J.

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Polyimide and BeO mini port card performance comparison for CDF run IIb by Cardoso, G., Andresen, J., Aoki, M., Bacchetta, N., Behari, S., Derylo, G., Flaugher, B., Franzen, J., Lu, R.-S., Pavlicek, V., Zimmermann, S.

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Study of breakdown effects in silicon multiguard structures by Da Rold, M., Bacchetta, N., Bisello, D., Paccagnella, A., Dalla Betta, G.-F., Verzellesi, G., Militaru, O., Wheadon, R., Fuochi, P.G., Bozzi, C., Dell'Orso, R., Messineo, A., Tonelli, G., Verdini, P.G.

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Charge collection efficiency of standard and oxygenated silicon microstrip detectors by Stavitski, I., Rando, R., Bisello, D., Bacchetta, N., Candelori, A., Kaminski, A., Wyss, J.

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Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration by Lindström, G, Ahmed, M, Albergo, S, Anderson, D, Augelli, V, Bacchetta, N, Bartalini, P, Bates, R, Biggeri, U, Bisello, D, Boemi, D, Borchi, E, Burger, P, Campabadal, F, Chilingarov, A, Ciampolini, P, Cindro, V, Creanza, D, Da Via, C, Davies, G, De Boer, W, Dell’Orso, R, Dezillie, B, Eremin, V, Evrard, O, Fanourakis, G, Feick, H, Focardi, E, Fonseca, L, Fretwurst, E, Fuster, J, Gabathuler, K, Glaser, M, Hall, G, Heising, S, Holmes-Siedle, A, Hughes, G, Jones, B.K, Jungermann, L, Kohout, Z, Kramberger, G, Kuhnke, M, Kwan, S, Lemeilleur, F, Leroy, C, Li, Z, Ligonzo, T, Linhart, V, Litovchenko, P, Loukas, D, Lozano, M, Luczynski, Z, Lutz, G, MacEvoy, B, Manolopoulos, S, Markou, A, Martinez, C, Messineo, A, Moll, M, Oshea, V, Parrini, G, Passeri, D, Petre, D, Pickford, A, Pintilie, I, Pospisil, S, Raine, C, Ratoff, P.N, Richter, R.H, Roy, P, Ruzin, A, Ryazanov, A.I, Santocchia, A, Schiavulli, L, Sicho, P, Slysz, W, Smith, K, Stolze, K, Sundby Avset, B, Svensson, B, Tivarus, C, Tricomi, A, Tzamarias, S, Valvo, G, Vasilescu, A, Vayaki, A, Verbitskaya, E, Verdini, P, Vrba, V, Watts, S, Weber, E.R, Wegrzecki, M, Wegrzecka, I, Wheadon, R, Wilhelm, I, Wunstorf, R, Wüstenfeld, J, Wyss, J, Zankel, K, Žontar, D

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High-energy ion irradiation effects on thin oxide p-channel MOSFETs by Candelori, A., Contarato, D., Bacchetta, N., Bisello, D., Hall, G., Noah, E., Raymond, A., Wyss, J.

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CDF run IIb silicon vertex detector DAQ upgrade by Behari, S., Bacchetta, N., Bolla, G., Cardoso, G., Ciobanu, C.I., Flaugher, B., Garcia-Sciveres, M., Haber, C., Hara, K., Harr, R., Hsiung, T.H., Junk, T., Kim, S., Lu, R.-S., Lujan, P., Maksimovic, P., Merkel, P., Nord, B., Pavlicek, V., Pellett, D., Pursley, J., Schuyler, B., Shenai, A., Treptow, K., Weber, M., Zimmermann, S.

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SPICE evaluation of the S/N ratio for Si microstrip detectors by Candelori, A., Paccagnella, A., Nardi, F., Bacchetta, N., Bisello, D.

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Silicon microstrip detectors on 6″ technology by Bolla, G, Bortoletto, D, Guenther, M, Martignon, G, Bacchetta, N, Bisello, D, Leonardi, G.L, Lucas, T, Wilburn, C

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Status report of the intermediate silicon layers detector at CDFII by Affolder, A., Barbaro-Galtieri, A., Connolly, A., Haber, C., Zetti, F., Bacchetta, N., Bisello, D., Glezinski, D., Goldstein, J., Incandela, J., Leonardi, G., Colijn, A.P., Stuart, D., D’Onofrio, M., Basti, A., Chiarelli, G., Leone, S., Munar-Ara, A., Palmonari, F., Raffaelli, F., Scuri, F., Tonelli, D., Baroiant, S., Caskey, W., Grimm, G., Hill, C., Lander, R., Wilkes, T.

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Construction report of the intermediate silicon layers (ISL) ladders by Affolder, A., Barbaro-Galtieri, A., Connolly, A., Haber, C., Zetti, F., Bacchetta, N., Bisello, D., Glezinski, D., Goldstein, J., Incandela, J., Leonardi, G., Colijn, A.P., Stuart, D., Basti, A., Chiarelli, G., D'Onofrio, M., Leone, S., Munar-Ara, A., Scuri, F., Palmonari, F., Tonelli, D., Baroiant, S., Caskey, W., Grimm, G., Hill, C., Lander, R., Wilkes, T.

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Radiation damage experience at CDF with SVX by Azzi, P., Bacchetta, N., Bolla, G., Glenzinski, D., Haber, C., Incandela, J., Kajfasz, E., Peters, M.D., Shaw, N.M., Snider, F.P., Spalding, J., Spiegel, L., Stuart, D.

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HSPICE simulations of Si microstrip detectors by Bacchetta, N, Bisello, D, Candelori, A, Da Rold, M, Nardi, F, Paccagnella, A

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Impact of 24-GeV Proton Irradiation on 0.13-$mu$m CMOS Devices by Gerardin, S., Gasperin, A., Cester, A., Paccagnella, A., Ghidini, G., Candelori, A., Bacchetta, N., Bisello, D., Glaser, M.

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MRS detectors with high gain for registration of weak visible and UV light fluxes by Bacchetta, N., Bisello, D., Broz, F., Catuozzo, M., Gotra, Y., Guschin, E., Lacaita, A., Malakhov, N., Musienko, Y., Nicolosi, P., Paccagnella, A., Pace, E., Pantano, D., Sadygov, Z., Villoresi, P., Zappa, F.

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A SPICE model for Si microstrip detectors and read-out electronics by Bacchetta, N., Bisello, D., Calgarotto, C., Candelori, A., Paccagnella, A.

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Radiation effects on breakdown characteristics of multiguarded devices by Da Rold, M., Paccagnella, A., Da Re, A., Verzellesi, G., Bacchetta, N., Wheadon, R., Dalla Betta, G.-F., Candelori, A., Soncini, G., Bisello, D.

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