Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface by Akopyan, A. A., Bachronov, Kh. N., Borkovskaya, O. Yu, Dmitruk, N. L., Yodgorova, D. M., Karimov, A. V., Konakova, R. V., Mamontova, I. B.

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