Search Results - Bachrouri, A

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  1. 1
    Density of states in the channel material of low temperature polycrystalline silicon thin film transistors

    Density of states in the channel material of low temperature polycrystalline silicon thin film transistors by Mourgues, K, Rahal, A, Mohammed-Brahim, T, Sarret, M, Kleider, J.P, Longeaud, C, Bachrouri, A, Romano-Rodriguez, A

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  2. 2
    Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

    Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen by Misiuk, A, Bak-Misiuk, J, Antonova, I.V, Raineri, V, Romano-Rodriguez, A, Bachrouri, A, Surma, H.B, Ratajczak, J, Katcki, J, Adamczewska, J, Neustroev, E.P

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  3. 3
    TEM characterisation of high pressure–high-temperature-treated Czochralski silicon samples

    TEM characterisation of high pressure–high-temperature-treated Czochralski silicon samples by Romano-Rodrı́guez, A, Bachrouri, A, López, M, Morante, J.R, Misiuk, A, Surma, B, Jun, J

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  4. 4
    Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

    Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si by Misiuk, A., Surma, H.B., Bak-Misiuk, J., Romano-Rodriguez, A., Wnuk, A., Brzozowski, A., Bachrouri, A., Barcz, A.

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  5. 5
    Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure

    Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure by Bak-Misiuk, J., Antonova, I.V., Misiuk, A., Domagala, J., Popov, V.P., Obodnikov, V.I., Härtwig, J., Romano-Rodriguez, A., Bachrouri, A.

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  6. 6
    Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure

    Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure by BAK-MISIUK, J, ANTONOVA, I. V, MISIUK, A, DOMAGALA, J, POPOV, V. P, OBODNIKOV, V. I, HÄRTWIG, J, ROMANO-RODRIGUEZ, A, BACHROURI, A

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  7. 7
    Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

    Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen by MISIUK, A, BAK-MISIUK, J, NEUSTROEV, E. P, ANTONOVA, I. V, RAINERI, V, ROMANO-RODRIGUEZ, A, BACHROURI, A, SURMA, H. B, RATAJCZAK, J, KATCKI, J, ADAMCZEWSKA, J

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  8. 8
    Kinetic parameters of Escherichia coli O157:H7 survival during fermentation of milk and refrigeration of home-made yoghurt

    Kinetic parameters of Escherichia coli O157:H7 survival during fermentation of milk and refrigeration of home-made yoghurt by Bachrouri, M., Quinto, E.J., Mora, M.T.

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  9. 9
    Survival of Escherichia Coli O157:H7 During Storage of Yogurt at Different Temperatures

    Survival of Escherichia Coli O157:H7 During Storage of Yogurt at Different Temperatures by Bachrouri, M, Quinto, E.J, Mora, M.T

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