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Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD
by
Malinauskas, T.
,
Kadys, A.
,
Stanionytė, S.
,
Badokas, K.
,
Mickevičius, J.
,
Jurkevičius, J.
,
Dobrovolskas, D.
,
Tamulaitis, G.
Published in
Physica Status Solidi. B: Basic Solid State Physics
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Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells
by
Dmukauskas, M
,
Kadys, A
,
Malinauskas, T
,
Grinys, T
,
Reklaitis, I
,
Badokas, K
,
Skapas, M
,
Tomaši nas, R
,
Dobrovolskas, D
,
Stanionyt, S
,
Pietzonka, I
,
Strassburg, M
,
Lugauer, H-J
Published in
Journal of physics. D, Applied physics
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Journal Of Physics. D, Applied Physics
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Physica Status Solidi
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Physica Status Solidi B-Basic Solid State Physics
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Physica Status Solidi. B, Basic Solid State Physics
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Physica Status Solidi. B: Basic Solid State Physics
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Subjects
Mocvd
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Physical Sciences
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Physics
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Science & Technology
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Bgan
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Boron
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Condensed Matter Physics
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Deposition
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Doppler Effect
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Electronic, Optical And Magnetic Materials
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Epitaxy
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Extreme Values
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Gallium Nitrides
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Iii-Nitride Semiconductors
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Iii-V Semiconductors
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Iiiv Semiconductors
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Iii‐Nitride Semiconductors
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Photoluminescence
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Physics, Applied
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Physics, Condensed Matter
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Science Citation Index Expanded (Web Of Science)
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Wiley-Blackwell Journals
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Institute Of Physics
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Wiley-Blackwell Read & Publish Collection
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Institute Of Physics Iopscience Extra
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