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1.8 million transistor CMOS ASIC fabricated in a SiGe BiCMOS technology
by
Johnson, R.A.
,
Zierak, M.J.
,
Outama, K.B.
,
Bahn, T.C.
,
Joseph, A.J.
,
Cordero, C.N.
,
Malinowski, J.
,
Bard, K.A.
,
Weeks, T.W.
,
Milliken, R.A.
,
Medve, T.J.
,
May, G.A.
,
Chong, W.
,
Walter, K.M.
,
Tempest, S.L.
,
Chau, B.B.
,
Boenke, M.
,
Nelson, M.W.
,
Harame, D.L.
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Conference Proceeding
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Conference Proceedings
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Application Specific Integrated Circuits
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Bicmos Integrated Circuits
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Bicmos-Technologie
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Bipolar Transistor Circuits
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Circuit Testing
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Elektrostatische Entladung
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Engineering
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Engineering, Electrical & Electronic
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Germanium Silicon Alloys
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Heterojunction Bipolar Transistors
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Integrierte Bicmos-Schaltung
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Integrierte Gemischte Analog-Digital-Schaltung
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Integrierte Schaltungsausbeute
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Kundenschaltung
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Libraries
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Performance Evaluation
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Science & Technology
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Silicon Germanium
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Technology
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